Anisotropy in the Growth Rates of Silicon Deposited by Reduction of Silicon Tetrachloride

Nishizawa, Jun–ichi; KATO, Y.; Shimbo, M.

doi:10.1016/b978-1-4831-9854-5.50043-4

Vapour Growth and Epitaxy 1975

DOI: 10.1016/b978-1-4831-9854-5.50043-4

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Anisotropy in the Growth Rates of Silicon Deposited by Reduction of Silicon Tetrachloride

Jun–ichi Nishizawa

Y. KATO

M. Shimbo

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Anisotropy in the Growth Rates of Silicon Deposited by Reduction of Silicon Tetrachloride

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References 5 publications

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