2000
DOI: 10.1103/physrevb.62.9349
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Anisotropy effects in physical sputtering investigated by laser-induced fluorescence spectroscopy

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Cited by 50 publications
(42 citation statements)
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“…The shapes of these distributions are only weakly dependent on the positive ion energy, at least for energies varying by a few tens of volts, as we already observed experimentally in [59], and had already been observed previously 76,77 . However, the energy of the impinging positive ion is primordial to reproduce correctly the maximum energy of the backscattered IDFs (see Figure 3).…”
Section: Iii) Idf Versus Positive Ion Energysupporting
confidence: 86%
“…The shapes of these distributions are only weakly dependent on the positive ion energy, at least for energies varying by a few tens of volts, as we already observed experimentally in [59], and had already been observed previously 76,77 . However, the energy of the impinging positive ion is primordial to reproduce correctly the maximum energy of the backscattered IDFs (see Figure 3).…”
Section: Iii) Idf Versus Positive Ion Energysupporting
confidence: 86%
“…refs [23,24]) and often reasonable quantitative agreement is obtained. A less comprehensive comparison with experimental data exists on the angular distributions of sputtered atoms and the sputtering yield dependence on ion incidence angle [23,[25][26][27][28][29][30][31][32][33].…”
Section: Introductionmentioning
confidence: 99%
“…(c) Comparison of high-energy part of Na ejecta distribution (dashed line) and SRIM simulations (solid line, for the assumed surface composition [see Goettel, 1988]) for E i = 1 keV. (d) SHEA energy spectra for Ar + of different E i on W at zero incident and ejection angles [Goehlich et al, 2000]. (e) Ejection of Na from Na 2 SO 4 for impacting Ar + of 3.5 keV and with E b ∼ 0.27 eV [Wiens et al, 1997].…”
Section: Production Of Sheamentioning
confidence: 99%
“…These ions may be partly neutralized and backscattered from the surface to space (up to 20% for light ions like the SW major components [see McComas et al, 2009;Wieser et al, 2009]), but a significant fraction of the incident ions, increasing with ions atomic mass number, can be implanted on the EB surface while ejecting a surface atom or molecule. Sputtering products from impacts of keV ions can have energies, peaking at few eV with a high-energy non-Maxwellian tail, up to at least several tens eV for a refractory material [Goehlich et al, 2000]. We refer to this component of the surface ejecta as sputtered high-energy atoms (SHEA).…”
Section: Introductionmentioning
confidence: 99%