2022
DOI: 10.1103/physrevb.105.094434
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Anisotropic spin dynamics in semiconductor narrow wires from the interplay between spin-orbit interaction and planar magnetic field

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Cited by 3 publications
(2 citation statements)
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“…Clearly, the 𝒑-cubic fields introduce oscillations of the spin polarization during the spin-transport and may cause, in conjunction with disorder, an additional spin dephasing, which are detrimental for instance to the robustness of realistic spin-transistors [26,27]. Moreover, the recent theoretical and experimental studies have put forward a significant role of the anisotropy on the spin dynamics in semiconductor narrow wires which are induced by the interaction between the linear and cubic-Deresselhaus spin-orbit fields and the Larmor precession under an in-plane magnetic field [28,29]. Very recent theoretical studies have emphasized a complex picture that emerges once we consider the dominant cubic-Deresselhaus SOC by exploring the superconducting correlations, the support of Majorana bound states relevant for superconducting spintronics [30].…”
Section: Introductionmentioning
confidence: 99%
“…Clearly, the 𝒑-cubic fields introduce oscillations of the spin polarization during the spin-transport and may cause, in conjunction with disorder, an additional spin dephasing, which are detrimental for instance to the robustness of realistic spin-transistors [26,27]. Moreover, the recent theoretical and experimental studies have put forward a significant role of the anisotropy on the spin dynamics in semiconductor narrow wires which are induced by the interaction between the linear and cubic-Deresselhaus spin-orbit fields and the Larmor precession under an in-plane magnetic field [28,29]. Very recent theoretical studies have emphasized a complex picture that emerges once we consider the dominant cubic-Deresselhaus SOC by exploring the superconducting correlations, the support of Majorana bound states relevant for superconducting spintronics [30].…”
Section: Introductionmentioning
confidence: 99%
“…Rashba SOI, which is induced by structural inversion symmetry, overshadows other spin-orbit interactions for narrow gap semiconductors and can be adjusted using external gate voltage. The presence of Rashba in quantum wires and dots in several different environments has been investigated extensively [19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%