Anisotropic resistivity of the antiferromagnetic insulator

Abstract

Abstract. The anisotropic resistivities of Bi 2 Sr 2 Ca 1−x Er x Cu 2 O 8 single crystals were measured and analyzed from 4.2 to 500 K with special interest taken in the parent antiferromagnetic insulator with x=1.0. Although the resistivity is semiconducting along both the in-plane and out-of-plane directions, the temperature dependences are found to be significantly different. As a result, the resistivity ratio for x=1.0 exhibits a broad maximum near room temperature. The electric conduction in the parent antiferromagnetic insulators is different from that in other semiconductors, and is as unconventional as that in high-temperature superconductors.

Anisotropic dielectric Constant of the Parent Antiferromagnet Bi2Sr2 MCu2O8 (M=Dy, Y and Er) Single Crystals

“…In particular, ρ ab for M =Er is nearly independent of temperature at 300 K, which indicates that the in-plane conduction is nearly metallic. It should be noted here that ρ c /ρ ab is strongly dependent on temperature and the doping levels, which suggests the confinement behavior in the AF insulator [2]. Figure 2 shows the in-plane dielectric constant (ε ab ) and the out-of-plane dielectric constant (ε c ) for M =Er and Dy at 1 MHz.…”

“…We have been studying the charge transport of the parent insulator Bi 2 Sr 2 M Cu 2 O 8 (M =Y and rare-earth) [2]. In this proceedings we report on measurements and analyses of the anisotropic dielectric constants from 80 to 300 K.…”

Chemical potential shift in lightly doped to overdopedBi2Sr2Ca

“…Details of sample preparation are given in Ref. 12. The hole concentration ␦ per Cu atom was estimated from the empirical relationship between ␦ and the room-temperature thermopower.…”

“…Recently, high quality crystals of heavily underdoped BSCCO were systematically synthesized by rare-earth ͑R͒ substitution for Ca and the doping dependence of thermodynamic and transport properties has been studied. 11,12 In this paper, we report on a core-level photoemission study of the chemical potential shift ⌬ in those Bi 2 Sr 2 Ca 1Ϫx R x Cu 2 O 8ϩy crystals as a function of doped hole concentration. The chemical potential shift was estimated from the core-level shifts as in the previous studies 3,5,13 utilizing the fact that the energies of core levels are measured in reference to in photoemission experiments.…”

Universality of the electronic structure from a half-filledCuO2plane

“…A 2 CuO 2 X 2 (A=Sr, Ca; X=Cl, Br), Sr 2 Cu 3 O 4 Cl 2 , and Bi 2 Sr 2 MCu 2 O 8 (M=Er, Dy) single crystals were grown by a slow cool flux method. 17,18 ARPES experiments were performed at beamlines V-3 and V-4 of the Stanford Synchrotron Radiation Laboratory. The beamline V-4 system is capable of achieving an energy and angular resolution better than 15meV and 0.25 • .…”