Abstract:The anisotropic relaxation behavior of the compressive residual stress of delafossite
CuAlO2
film was identified to take place on silicon substrate, on which the film was grown. Experimental results suggest that in order to release the internal compressive residual stress of the
CuAlO2
film, CuO hillocks would be favored to grow on the film surface. It was also proposed that because of the structural anisotropic nature associated with the delafossite
CuAlO2
, the compressive residual stress was released f… Show more
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