Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

Patra, Abhinandan; Rout, Chandra Sekhar

doi:10.1039/d0ra07160a

Cited by 70 publications

(49 citation statements)

References 169 publications

(301 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That the relation between electronic anisotropy and structure is unusual is also shown by the observation that the long axis of exfoliated CrSBr multilayers (which are platelets having one of their sides much longer than the other) corresponds to the crystallographic a-direction, that is, to the direction with low electrical conductivity. This is indeed rather unique, as it is commonly the case that materials exhibiting strongly anisotropic electronic transport are needles whose long axis points in the high conductivity direction (see, for examples, conductors such as ReS 2 , NbSe 3 , TiS 3 , ZrTe 5 , black phosphorus, or high-mobility organic semiconductors such as rubrene [31][32][33][34][35][36][37][38][39] ).…”

Section: Resultsmentioning

confidence: 99%

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Gutiérrez-Lezama

López-Paz

et al. 2022

Advanced Materials

View full text Add to dashboard Cite

The semiconducting properties of most 2D magnets investigated so far, however, are strongly affected by the extremely narrow widths of their conduction and valence bands, typically a few tens of meV or less. [7][8][9][10][11][12][13] Such narrow bandwidths cause electron localization and prevent low-temperature conductivity measurements, which is why transport experiments probing the magnetic properties of 2D semiconductors have been so far limited to studies of tunneling through atomically thin multilayer barriers. [14][15][16][17][18][19][20][21] CrSBr [22] (see Figure 1a)-a recently introduced 2D magnetic semiconductor-appears to be an exception. [23,24] First-principles calculations (shown in Figure 1b) predict its conduction band to have a width of ≈1.5 eV. [24,25] Accordingly, low-temperature in-plane magnetoresistance measurements (see Figure 1c,d) could be performed successfully, and analyzed to determine the magnetic phase diagram. [23] The unique magnetic properties of this material have been further showcased by experiments on van der Waals (vdW) interfaces, in which CrSBr was found to imprint into an adjacent graphene layer a giant exchange interaction, much stronger than what has been reported in earlier work on analogous heterostructures. [26] Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities σ a and σ b on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σ b /σ a ≈ 3 × 10 2 to 10 5 at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology-and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.

show abstract

Section: Resultsmentioning

confidence: 99%

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Gutiérrez-Lezama

López-Paz

et al. 2022

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…1 Very recently, it has been shown that they may also provide useful platforms for next-generation electronic and optoelectronic 2D materials. 2,3 The CDW material NbSe 3 for instance is one of the archetypal systems in low-dimensional materials science. 4,5 It was the first inorganic solid found to exhibit Froḧlich-type conductivity, and this observation launched a huge and continued interest on it.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Layered group V transition-metal trichalcogenides display a plethora of challenging physical and chemical properties such as charge density waves (CDW), superconductivity, easy chemical intercalation, and so forth . Very recently, it has been shown that they may also provide useful platforms for next-generation electronic and optoelectronic 2D materials. , The CDW material NbSe 3 for instance is one of the archetypal systems in low-dimensional materials science. , It was the first inorganic solid found to exhibit Fröhlich-type conductivity, and this observation launched a huge and continued interest on it. Almost 40 years later, very fundamental aspects of its physical and chemical behavior still remain challenging. − NbSe 3 , is a room-temperature quasi-one-dimensional metal which undergoes two successive Fermi surface-driven incommensurate CDW transitions at 145 and 59 K, respectively. ,, After the second CDW transition, NbSe 3 still exhibits metallic character so that the Fermi surface is not completely removed by the CDWs.…”

Section: Introductionmentioning

confidence: 99%

Rich Polymorphism of Layered NbS₃

et al. 2021

View full text Add to dashboard Cite

Layered group V transition-metal trichalcogenides are paradigmatic low-dimensional materials providing an ever increasing series of unusual properties. They are all based on the same basic building units, one-dimensional MX 3 (M = Nb, Ta; X = S, Se) trigonal-prismatic chains that condense into layers, but their electronic structures exhibit significant differences leading to a broad spectrum of transport properties, ranging from metals with one, two, or three charge density wave instabilities to semimetals with potential topological properties or semiconductors. The different physical and chemical properties are shown to be related with subtle structural differences within the layers that result in half-, third-, or quarter-filled quasi-one-dimensional Nb d z 2 -type bands, providing a clear-cut illustration of the intimate link between structural and electronic features within a family of solids. An interesting yet not sufficiently explored feature of these solids is the polymorphism. Based on both experimental and new theoretical results, we examine this aspect for NbS 3 and show that at least seven different polymorphs with a stability compatible with the presently known phases of this compound are possible. We discuss a simple rationale for the physical properties of the presently known polymorphs as well as predictions for those that have still not been characterized or prepared. It is argued that some of the presently unknown polymorphs may have been prepared in an uncontrolled way as mixtures of different phases which could not be structurally characterized. The rich landscape of structures and properties found for this van der Waals material is suggested to represent an ideal platform for the preparation of flakes with finetuned properties for applications in new electronic and optoelectronic devices.

show abstract

“…That the relation between electronic anisotropy and structure is unusual is also shown by the observation that the long axis of exfoliated CrSBr multilayers (which are platelets having one of their sides much longer than the other) corresponds to the crystallographic a-direction, i.e., to the direction with low electrical conductivity. This is indeed rather unique, as it is commonly the case that materials exhibiting strongly anisotropic electronic transport are needles whose long axis points in the high conductivity direction TiS 3 , ZrTe 5 , black phosphorus or high-mobility organic semiconductors such as rubrene [31][32][33][34][35][36][37][38][39]).…”

Section: Resultsmentioning

confidence: 99%

Quasi 1D electronic transport in a 2D magnetic semiconductor

Wu,

Gutiérrez-Lezama,

Lopéz-Paz

et al. 2022

Preprint

View full text Add to dashboard Cite

We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities σa and σ b on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σ b /σa ≈ 3 • 10 2 − 10 5 at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties.

show abstract

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

Abstract: The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX3 materials.

Cited by 70 publications

References 169 publications

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Rich Polymorphism of Layered NbS₃

Quasi 1D electronic transport in a 2D magnetic semiconductor

Contact Info

Product

Resources

About

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

Abstract: The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX3 materials.

Cited by 70 publications

References 169 publications

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor

Rich Polymorphism of Layered NbS3

Quasi 1D electronic transport in a 2D magnetic semiconductor

Contact Info

Product

Resources

About

Rich Polymorphism of Layered NbS₃