Anisotropic planar Hall effect in the type-II topological Weyl semimetal 
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Li, Peng; Zhang, Chenhui; Wen, Yan; Cheng, Ling; Nichols, George; Cory, David G.; Miao, Guo‐Xing; Zhang, Xixiang

doi:10.1103/physrevb.100.205128

Cited by 58 publications

(27 citation statements)

References 37 publications

(80 reference statements)

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“…The deviation in Kohler’s scaling is also in line with our nonlinear Hall data and multiband transport above 50 K. We performed a power law (Fig. 3 a inset) with MR% data at 2 K and fitting yields n = 1.53 which shows a subquadratic field dependence 60 , 61 . MR ~ B n where n is predicted to be 2 for semimetals with perfect electron–hole compensation.…”

Section: Resultssupporting

confidence: 81%

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Pal

Kumar

Shahi

et al. 2021

Sci Rep

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The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.

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Section: Resultssupporting

confidence: 81%

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Pal

Kumar

Shahi

et al. 2021

Sci Rep

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“…[ 74 ] The LVO–KTO interface not only shows the highest internal magnetic field (Rashba field) among all perovskite oxide interfaces [ 45 ] but also exhibits planar Hall effect (PHE) and anisotropic magnetoresistance (AMR), thereby strongly resembling Weyl materials. [ 75–78 ] A new system forming 2DEG at the interface of LaCrO 3 (LCO)–KTO has been recently reported showing interfacial coupling. [ 79 ] All these fascinating observations (also summarized in Figure 2a) were reported within the last five years, which strongly suggests a bright future for KTO based systems.…”

Section: Introductionmentioning

confidence: 99%

KTaO₃—The New Kid on the Spintronics Block

Gupta¹,

Harsha²,

Kumari³

et al. 2022

Advanced Materials

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Long after the heady days of high‐temperature superconductivity, the oxides came back into the limelight in 2004 with the discovery of the 2D electron gas (2DEG) in SrTiO3 (STO) and several heterostructures based on it. Not only do these materials exhibit interesting physics, but they have also opened up new vistas in oxide electronics and spintronics. However, much of the attention has recently shifted to KTaO3 (KTO), a material with all the “good” properties of STO (simple cubic structure, high mobility, etc.) but with the additional advantage of a much larger spin‐orbit coupling. In this state‐of‐the‐art review of the fascinating world of KTO, it is attempted to cover the remarkable progress made, particularly in the last five years. Certain unsolved issues are also indicated, while suggesting future research directions as well as potential applications. The range of physical phenomena associated with the 2DEG trapped at the interfaces of KTO‐based heterostructures include spin polarization, superconductivity, quantum oscillations in the magnetoresistance, spin‐polarized electron transport, persistent photocurrent, Rashba effect, topological Hall effect, and inverse Edelstein Effect. It is aimed to discuss, on a single platform, the various fabrication techniques, the exciting physical properties and future application possibilities of this family of materials.

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“…Recently, the effect is in the spotlight due to its role in probing topological characteristics such as chirality. In Weyl semimetals, the origin of PHE coupled with negative magnetoresistance is considered a signature of chiral anomaly [18][19][20][21][22][23][24] . The origin of non-zero off-diagonal terms in the resistivity tensor could be attributed to several mechanisms including classical orbital magnetoresistance 25 .…”

mentioning

confidence: 99%

Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$

Bhardwaj,

P.,

Raman

et al. 2021

Preprint

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Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance in TIs, our present study reflects the need for considering the bulk conduction in understanding PHE in TIs. Here, we demonstrate an enhancement in PHE amplitude by three times by doubling the thickness of Bi 2 Te 3 film on Si (111). The PHE amplitude reaches ≈ 6 nΩm in 30 quintuple layer (QL) device as compared to ≈ 2 nΩm in 14 QL. We find that the PHE amplitude increases with temperature in the 30 QL Bi 2 Te 3 films grown on Si (111) and Al 2 O 3 (0001). Our experiments indicate that the contribution of bulk states to PHE in TIs could be significant.

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Anisotropic planar Hall effect in the type-II topological Weyl semimetal WTe2

Cited by 58 publications

References 37 publications

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

KTaO₃—The New Kid on the Spintronics Block

Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$

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Anisotropic planar Hall effect in the type-II topological Weyl semimetal WTe2

Cited by 58 publications

References 37 publications

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

KTaO3—The New Kid on the Spintronics Block

Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$

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Product

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About

KTaO₃—The New Kid on the Spintronics Block