Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (1 0 0) surface

Over 5 × 103-Fold Enhancement of Responsivity in Ga2O3-Based Solar Blind Photodetector via Acousto–Photoelectric Coupling

“…It is an extremely effective low light detection enhancement scheme. Table S1 in the Supporting Information and Figure summarize the responsivity versus detectivity of the reported Ga 2 O 3 -based solar-blind PDs. − ,− The SAW-enhanced performance of our device is comparable to that of the state-of-the-art APDs and commercial PMTs . Considering that the photoconductive device has extensive potential applications for its convenience in construction, our enhancement scheme can be applied to develop more practical Ga 2 O 3 -based solar blind PDs.…”

“…Available WBG semiconductors with a band gap ( E g ) exceeding 4.4 eV include MgZnO (3.35–7.8 eV, alloying), AlGaN (3.4–6.2 eV, alloying), and Ga 2 O 3 (4.5–4.9 eV). , Among them, Ga 2 O 3 has sprung to the forefront of solar-blind PDs owing to its favorable characteristics, such as superior thermal and chemical stability, high breakdown electric field (∼8 MV/cm), and intrinsic solar rejection . To date, diverse configurations of Ga 2 O 3 -based solar-blind PDs have been developed, including photoconductive, − photovoltaic, − and avalanche modes. − Each mode has its own advantages and disadvantages. Photoconductive PDs offer advantages of simple fabrication and consistent performance but suffer from mediocre detectivity and slow response speed.…”

Persistent Photoconductivity Control in Zn-Doped SnO2 Thin Films for the Performance Enhancement of Solar-Blind Ultraviolet Photodetectors

“…Among the various transparent oxides, SnO 2 has been widely studied as a photodetector due to its advantages, such as its diverse and simple manufacturing processes, wide band gap energy, and high durability. Therefore, SnO 2 has been considered as the suitable material for the solar-blind UV photodetector. , However, the oxide semiconductors have suffered from severe persistent photoconductivity problems, which keeps their conductivity high for a few hours even after removing illumination. − This severely degrades the response speed and frame rate of oxide-based photodetectors or sensor arrays. The persistent photoconductivity has been believed to be related to the trapping and release of charge carriers by the trap levels induced by residual oxygen vacancies or impurities in the materials. , The fast response comes from the fast change of carrier concentration, and it is governed by wide depletion width via oxygen adsorption at the surface .…”

“…Wide band gap semiconductors, such as SnO 2 , SiC, Ga 2 O 3 , and Al x Ga 1– x N, have been potential candidates for solar-blind UV photodetectors. ,− Especially transparent oxide semiconductors such as SnO 2 or Ga 2 O 3 have been investigated widely because they are relatively easy to fabricate by various methods and exhibit high resistance to environmental effects. Among the various transparent oxides, SnO 2 has been widely studied as a photodetector due to its advantages, such as its diverse and simple manufacturing processes, wide band gap energy, and high durability.…”

Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application

“…16 Tao et al have researched the vibrational anisotropy of β-Ga 2 O 3 nanorods. 17 Although bulk and nano β-Ga 2 O 3 materials have already been shown to be the preferred materials for polarization photodetectors, their high cost and poor reproducibility have hindered commercialization.…”