Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3

Naftalis, Netanel; Bason, Y.; Hoffman, Jason; Hong, Xia; Ahn, Charles; Klein, Lior

doi:10.1063/1.3176934

Cited by 17 publications

(7 citation statements)

References 14 publications

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“…We note that deviations from Eq. ( 1) due to anisotropic resistivity in single crystals [39,40], such as in SrRuO 3 films [41][42][43], are also unlikely since the Hall bars used in our experiments were patterned by hand, and therefore repeated alignment with specific crystal axis is unlikely. Furthermore, no such deviations were found in high magnetic field measurements of TIs [6].…”

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confidence: 99%

Unconventional planar Hall effect in exchange-coupled topological insulator–ferromagnetic insulator heterostructures

et al. 2018

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The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional planarHall effect (PHE) and an electrically gate-tunable hysteretic planar magnetoresistance (PMR) in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchangecoupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the electric current. This

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confidence: 99%

Unconventional planar Hall effect in exchange-coupled topological insulator–ferromagnetic insulator heterostructures

et al. 2018

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“…where φ is the angle between the magnetization and current, and R and R ⊥ denote the in-plane resistances for current oriented parallel (φ = 0 • ) and perpendicular (φ = 90 • ) to the magnetization, respectively 19,27,28 . Figure 4 shows the AMR = [R (β) − R (β = 0 • )] /R (β = 0 • ) signal measured at 110 K as the in-plane magnetic field is rotated relative to the current direction.…”

Section: Anisotropic Magnetoresistive Readout Of Non-collinear Mmentioning

confidence: 99%

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Hoffman

Kirby

et al. 2018

Phys. Rev. Applied

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Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a non-collinear magnetic phase in LaNiO3/La 2/3 Sr 1/3 MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new "knob" to tune magnetic ordering, we take a nanoscale materialsby-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

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“…1 and 2 are applicable for isotropic or polycrystalline materials, they fail to fully account for the magnetotransport properties of crystalline systems, where additional terms arise [5]. This has been demonstrated for [001]-oriented epitaxial manganites thin films [6,7], where a description of AMR and PHE is provided by taking into account the cubic symmetry of the system. The applicable equations are:…”

Section: Introductionmentioning

confidence: 99%

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

et al. 2011

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A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe 3 O 4 ) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.

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Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3

Cited by 17 publications

References 14 publications

Unconventional planar Hall effect in exchange-coupled topological insulator–ferromagnetic insulator heterostructures

Unconventional planar Hall effect in exchange-coupled topological insulator–ferromagnetic insulator heterostructures

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

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