Anisotropic magnetoresistance and planar Hall effect in (001) and (111) 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>LaVO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
 heterostructures

Tomar, Ruchi; Kakkar, Sonali; Bera, Chandan; Chakraverty, S.

doi:10.1103/physrevb.103.115407

Cited by 15 publications

(11 citation statements)

References 59 publications

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“…The results obtained from figure 4(a) demonstrate that the amplitude of the Hall conductivity decreases as the Fermi energy increases, consistent with the behavior described by equation (21). Furthermore, for strains beyond the weak strain limit, the amplitude of the oscillating Hall conductivity remains linearly dependent on the magnetic field, as shown in figure 4(b).…”

Section: Disorder-corrected Planar Hall Conductivity Due To Nonmagnet...supporting

confidence: 82%

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

Li,

Wang

2024

J. Phys.: Condens. Matter

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The anomalous Hall effect induced by the in-plane magnetic field (anomalous planar Hall effect) has recently attracted a lot of interests due to its numerous advantages. Although several schemes have been put forward in theory, experimental observations in many materials so far are often accompanied by planar Hall effects due to other mechanisms, rather than the pure anomalous planar Hall effect. We propose the surface state of the strained topological insulator as an ideal candidate to observe this effect. The surface state exhibits a pure anomalous planar Hall effect, characterized by a linear dependence on the magnetic field and a $2\pi$ periodicity, which remains robust against the scattering of non-magnetic and various magnetic impurities, as long as the uniaxial strain preserves mirror symmetry. Although a general strain that breaks the mirror symmetry can induce the conventional Drude Hall effect, the anomalous contribution remains dominant. Furthermore, we present a feasible scheme to distinguish between the two contributions based on their distinct magnetic field dependencies. Our work is of great significance for promoting experimental observation of the anomalous planar Hall effect and provides reference value in the search for other realistic materials.

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Section: Disorder-corrected Planar Hall Conductivity Due To Nonmagnet...supporting

confidence: 82%

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

Li,

Wang

2024

J. Phys.: Condens. Matter

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“…The fourfold in‐plane AMR was also reported in other SrTiO 3 ‐based interfaces, where the Ti 3 d orbitals that are strongly coupled to the crystal symmetry play an important role in magnetic scattering. [ 70–73 ] To sum up, the MR data in Figure 4 reveal that the scattering centers may have unpaired electrons, locate close to the interface, and interact closely with Ti 3 d orbitals (or crystal symmetry). Hence, it is reasonable to conclude that the interfacial localized Ti 3+ ions are the scattering centers in the bilayer 2DES.…”

Section: Resultsmentioning

confidence: 99%

Controlling Transport Properties of 2D Electron System Hosted by SrTiO₃‐Based Bilayers

Huang

Han

et al. 2022

Physica Rapid Research Ltrs

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Compared with the conventional 2D electron system (2DES) located between the LaAlO3 layer and SrTiO3 substrate, the LaAlO3/SrTiO3 bilayers are also capable of hosting 2DES with additional functional tunabilities. Herein, the LaAlO3 and SrTiO3 layers are epitaxially grown on the (La,Sr)(Al,Ta)O3 substrate to build a bilayer 2DES. The transport properties can be subtly tuned by the SrTiO3 layer thickness (tSTO), growth temperature (TG), and oxygen pressure (PO2), leading to various controllable electronic states. For the metallic bilayer 2DES, the low‐temperature carrier density (≈1014 cm−2) is one‐order‐of‐magnitude higher than that of the conventional 2DES (1012–1013 cm−2). Meanwhile, the bilayer 2DES exhibits the enhanced carrier mobility on increasing the carrier density, which contradicts the experimental results obtained from the conventional 2DES and suggests an important role of charge screening in the high‐carrier‐density bilayer 2DES. Moreover, the semiconducting bilayer 2DES, featured by the lower carrier density and thus less charge screening, shows the low‐field negative minimum and enhanced fourfold anisotropy in magnetoresistances. Those results infer that the majority of scattering centers shall be interfacial localized Ti3+ ions, which are screened by the high carrier density in the metallic bilayer 2DES.

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“…The AMR and PHE observed in STO-based systems have been irregular and their origins were linked to anisotropy in magnetic scattering and change in the Fermi surface due to their orbital configuration and reconstruction. [199][200][201][202][203][204] The LVO-KTO system was found to show both PHE and AMR, [45] which were oscillatory in nature, having sinφcosφ and cos 2 φ dependences, respectively (Figure 18d,e). The AMR oscillations showed a transition from twofold to fourfold behavior when the magnetic exceeded 7 T, whereas no such change was observed in the PHE.…”

Section: Conducting Interface Of Lavo 3 and Ktao 3 (001)mentioning

confidence: 99%

KTaO₃—The New Kid on the Spintronics Block

Gupta¹,

Harsha²,

Kumari³

et al. 2022

Advanced Materials

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Long after the heady days of high‐temperature superconductivity, the oxides came back into the limelight in 2004 with the discovery of the 2D electron gas (2DEG) in SrTiO3 (STO) and several heterostructures based on it. Not only do these materials exhibit interesting physics, but they have also opened up new vistas in oxide electronics and spintronics. However, much of the attention has recently shifted to KTaO3 (KTO), a material with all the “good” properties of STO (simple cubic structure, high mobility, etc.) but with the additional advantage of a much larger spin‐orbit coupling. In this state‐of‐the‐art review of the fascinating world of KTO, it is attempted to cover the remarkable progress made, particularly in the last five years. Certain unsolved issues are also indicated, while suggesting future research directions as well as potential applications. The range of physical phenomena associated with the 2DEG trapped at the interfaces of KTO‐based heterostructures include spin polarization, superconductivity, quantum oscillations in the magnetoresistance, spin‐polarized electron transport, persistent photocurrent, Rashba effect, topological Hall effect, and inverse Edelstein Effect. It is aimed to discuss, on a single platform, the various fabrication techniques, the exciting physical properties and future application possibilities of this family of materials.

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Anisotropic magnetoresistance and planar Hall effect in (001) and (111) LaVO3/SrTiO3 heterostructures

Cited by 15 publications

References 59 publications

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

Controlling Transport Properties of 2D Electron System Hosted by SrTiO₃‐Based Bilayers

KTaO₃—The New Kid on the Spintronics Block

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Anisotropic magnetoresistance and planar Hall effect in (001) and (111) LaVO3/SrTiO3 heterostructures

Cited by 15 publications

References 59 publications

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

Controlling Transport Properties of 2D Electron System Hosted by SrTiO3‐Based Bilayers

KTaO3—The New Kid on the Spintronics Block

Contact Info

Product

Resources

About

Controlling Transport Properties of 2D Electron System Hosted by SrTiO₃‐Based Bilayers

KTaO₃—The New Kid on the Spintronics Block