Anisotropic magnetoresistance and magnetostriction of [Fe15Ni85/Fe25Ni75] and [Co35Ni65/Fe25Ni75] multilayers

Jen, S. U.; Wu, Tung‐Chuan; Lin, Chien-Hung; Chang, Kai‐Hsin

doi:10.1016/j.ssc.2004.07.035

Cited by 10 publications

(6 citation statements)

References 19 publications

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“…was measured by the optical-cantilever (OC) method. The details of this method have been described in [11] and [12]. By using a thinner glass substrate, the sensitivity of the OC device can be reduced to nm.…”

Section: Methodsmentioning

confidence: 99%

Magnetic properties of face-centered cubic Co films

et al. 2006

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We deposited face-centered cubic (FCC) Co films on glass substrates by sputtering. From Auger-depth profile analysis, we found that there is one CoO layer, about 13 A thick, lying on the top surface of the Co film, and another CoO layer, about 37 A thick, lying within the Co/glass interface. At room temperature, the thin CoO film is supposed to be paramagnetic. However, because of the proximity effect between CoO and Co, the CoO layer may become ferromagnetic, with saturation magnetization . By fitting the saturation magnetization ( ) data of the whole Co/CoO film as a function of (1 ), where is the Co thickness, we can prove that the last conjecture is correct, and the of the CoO layer is indeed not zero. Both the dependence of the magnetostriction constant ( ) and the dependence of the coercive field ( ) show a two-region characteristic. The dividing line for the former quantity is at = 88 A, and for the latter it is at = 120 A. When crossing such a dividing line, there is a discontinuous jump in (or ). These phenomena occur because the lattice-strain and magnetoelastic effects within the CoO layer dominate the and the behavior in ultra-thin ( 88 A) Co films. In this region, the roughness-to-thickness ratio ( ) may also affect . Finally, there seems to be no connection between the grain size ( ) and .Index Terms-Co film, magnetostriction, proximity effect.

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Section: Methodsmentioning

confidence: 99%

Magnetic properties of face-centered cubic Co films

et al. 2006

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“…As the ␦t o thickness increases from 12 to 17 Å, x O decreases from 38% to 16% and x Co increases from 57% to 66%. Zone II therefore becomes thicker than zone I, yielding a more negative s value after field-annealing [14]. Conversely, as the thickness ␦t o increases from 17 to 22 Å, x O increases from 16% to 30% and x Co after field-annealing decreases from 66% to 54%.…”

Section: Resultsmentioning

confidence: 97%

“…The typical pressure of the base chamber was less than 1 × 10 −7 Torr, and the pressure of the Ar working chamber was maintained at 5 × 10 −3 Torr. Furthermore, the s of the glass/Co(75 Å)/AlOx(␦to)/Co(75 Å)/IrMn(90 Å) MTJ, where ␦to = 12, 17, 22, 26, and 30 Å, was also measured using the optical-cantilever method following two treatments [14,15]. To increase the sensitivity and reduce the substrate effect, a glass 0925-8388/$ -see front matter © 2009 Elsevier B.V. All rights reserved.…”

Section: Methodsmentioning

confidence: 99%

Effect of field-annealing on magnetostriction and tunneling magnetoresistance of Co/AlOx/Co/IrMn junctions

Chen

Tseng

Chang

et al. 2010

Journal of Alloys and Compounds

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“…The typical base chamber pressure was better than Torr, and the Ar working chamber pressure was Torr. Our MTJ had the following features: Si(100)/Ta(30 Å)/Co(75 Å)/AlO /Co(75 Å)/IrMn(90 Å)/ Ta(100 Å), where , and 30 Å In addition, the of glass/Co(75 Å)/AlO /Co(75 Å) MTJ was measured by the optical-cantilever method [6], [7].…”

Section: Methodsmentioning

confidence: 99%

Magnetostriction and Tunneling Magnetoresistance of Co/AlO$_{{\rm x}}$/Co/IrMn Junctions

Chen

Jen²,

Yao

2008

IEEE Trans. Magn.

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Cross-strip magnetic tunnel junctions (MTJs) were fabricated following this sequence: Si(100)/Ta(30 Å)/Co(75 Å)/AlO x ( t o )/Co (75 Å)/ IrMn(90 Å)/Ta(100 Å) was deposited under an in-plane deposition field (h) = 500 Oe, where t o = 12 17 22, and 26, and 30 Å was the thickness of the AlO x layer. Tunneling magnetoresistance (TMR) rose initially from 21% to 36% and then fell to 24% as t o increased monotonically. This means the spin tunneling weakened as t o 26 Å. The magnetostriction ( s ) of the Co/AlO x /Co MTJs was generally in the range of 23 ppm to 12 ppm. Moreover, the s vs. t o plot shows the concave-up feature. High-resolution sectional transmission electron microscope (HR X-TEM) with nanoprobe energy dispersive x-ray (EDX) spectroscopy was used to analyze the Co, Al, and O concentrations across each AlO x layer. The different concentration dependences along t o resulted in the s feature.In addition, HR X-TEM, showed that in the microstructure of each Co/AlO x /Co MTJ, the interfaces of Co/AlO x and AlO x /Co are smooth. We find that the optimal MTJ in this series has the following properties: TMR = 36% and s = 15 ppm.

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Anisotropic magnetoresistance and magnetostriction of [Fe15Ni85/Fe25Ni75] and [Co35Ni65/Fe25Ni75] multilayers

Cited by 10 publications

References 19 publications

Magnetic properties of face-centered cubic Co films

Magnetic properties of face-centered cubic Co films

Effect of field-annealing on magnetostriction and tunneling magnetoresistance of Co/AlOx/Co/IrMn junctions

Magnetostriction and Tunneling Magnetoresistance of Co/AlO$_{{\rm x}}$/Co/IrMn Junctions

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