Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO₂ transistor

Abstract

The control of field-driven ionic redistribution guided by crystal anisotropy increases the retention of H+s in VO2 lattices by locating H+ into the deep regions from the interfaces, and thus strengthens long-term memory in artificial synaptic devices.

Flexible Mott Synaptic Transistor on Polyimide Substrate for Physical Neural Networks

“…[ 14 ] Recently, artificial synaptic devices based on VO 2 have been reported, including two‐terminal memristors [ 7 ] and three‐terminal transistors. [ 15–19 ] However, in most of these works, VO 2 was grown on a rigid substrate, which is not suitable for wearable devices. Deng et al.…”

“…[14] Recently, artificial synaptic devices based on VO 2 have been reported, including two-terminal memristors [7] and three-terminal transistors. [15][16][17][18][19] However, in most of these works, VO 2 was grown on a rigid substrate, which is not suitable for wearable devices. Deng et al have fabricated a VO 2 artificial synaptic device on a mica substrate prepared by pulsed laser deposition (PLD).…”

Formation of Uniquely Oriented VO2 Thin Films by Topotactic Oxidation of V2O3 Epitaxial Films on R-Plane Al2O3

“…6 The phase transition can be induced by heating, cooling, and other external stimuli, such as laser irradiation, 7,8 voltage application, 9 and H + -ion insertion. 10,11 The significant changes occurring in the resistivity and infrared transmittance of VO 2 in response to these stimuli make it an attractive material for optical switches, 12 transistors, 13,14 and smart windows. 15,16 In these devices, VO 2 is used in the form of thin films.…”

“…26 Taking advantage of this anisotropy, a synaptic transistor based on two differently oriented VO 2 films has been developed. 11 As a route for the fabrication of oriented VO 2 films, in addition to the direct epitaxial deposition of VO 2 on a single crystal substrate, 16,19 the topotactic oxidation of V 2 O 3 epitaxial films has been reported. 27,28 Topotactic oxidation is an oxidation reaction involving topotactic transformation in which the product crystals inherit the crystallographic orientations from the precursor.…”

The ion migration process and cyclic stability of voltage-induced vanadium dioxide phase transition

“…[9][10][11] Therefore, there have been many methods that tried to address these problems, such as elemental doping, [12][13][14] strain modulation, [15][16][17][18] electron-proton co-doping, [19][20][21][22] and gating-induced modulation. [23][24][25] Originating from a solid electrolyte layer or an ionic liquid layer gating induced controllable, continuous and reversible phase transition of VO 2 , 26,27 gating-induced modulation could bring more potential for the flexible application of VO 2 .…”