Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

Šimonka, Vito; Nawratil, Georg; Hössinger, Andreas; Weinbub, Josef; Selberherr, S.

doi:10.1016/j.sse.2016.10.032

Cited by 7 publications

(7 citation statements)

References 22 publications

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“…Furthermore, the differences in growth rates between the various faces have been observed to be decreasing with time. This study contributes to the development of orientationdependent SiC oxidation models, 10 which are fundamental for device fabrication simulators, e.g., Silvaco's Victory Process simulator. 49 It is crucial for device fabrication to accurately predict oxidation growth of SiC incorporating the geometry of the oxide in modern electron devices, which require intricate oxide geometries.…”

Section: ■ Conclusionmentioning

confidence: 99%

“…However, there are still many issues to be solved on the material level, and the governing theory is not as mature as, for instance, for Si, e.g., electrical activation of impurities, , SiC/SiO 2 interface defects, and orientation-dependent oxidation. − These shortcomings require analyses on the microscopic levels, which will lead to performance improvements of SiC devices, e.g., inversion channel mobility and gate oxide stability, in order to further reduce the on-resistance and enhance the gate reliability . In particular, a detailed understanding of the atomic and molecular interactions of oxygen (O) and SiC will enable advances in SiC oxidation processes and thus assist in the goal of maximizing the efficiency of SiC devices and the corresponding device manufacturing processes. , …”

Section: Introductionmentioning

confidence: 99%

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ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

Šimonka¹,

Hössinger

Weinbub³

et al. 2017

J. Phys. Chem. A

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We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation of a-, C,- m-, and Si-crystallographic faces is studied at typical industry-focused temperatures in the range from 900 to 1200 °C based on the time evolution of the oxidation mechanism. The oxide thicknesses and the growth rates are obtained from these simulation results. In addition, an investigation of the silicon and carbon emission is performed with respect to various orientations in order to support further development of macroscopic physical models that aim to predict initial silicon carbide oxidation.

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Section: ■ Conclusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

Šimonka¹,

Hössinger

Weinbub³

et al. 2017

J. Phys. Chem. A

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“…Currently, obtaining three-dimensional discrete data of soil salinity through electromagnetic induction inversion models is one of the main ways to map 3D spatial variability of soil salinity [25,40]. An interpolation method can be used to estimate the target variables at non sampling sites [25,42]. Presently, the commonly used three-dimensional interpolation methods are mostly extended from the two-dimensional interpolation methods including IDW and Kriging.…”

Section: Model Performancementioning

confidence: 99%

Field-Scale Characterization of Spatio-Temporal Variability of Soil Salinity in Three Dimensions

Liu

et al. 2020

Remote Sensing

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Information on spatial, temporal, and depth variability of soil salinity at field and landscape scales is important for a variety of agronomic and environment concerns including irrigation in arid and semi-arid areas. However, challenges remain in characterizing and monitoring soil secondary salinity as it can largely be impacted by managements including irrigation and mulching in addition to natural factors. The objective of this study is to evaluate apparent electrical conductivity (ECa)-directed soil sampling as a basis for monitoring management-induced spatio-temporal change in soil salinity in three dimensions. A field experiment was conducted on an 18-ha saline-sodic field from Alar’s Agricultural Science and Technology Park, China between March, and November 2018. Soil ECa was measured using an electromagnetic induction (EMI) sensor for four times over the growing season and soil core samples were collected from 18 locations (each time) selected using EMI survey data as a-priori information. A multi-variate regression-based predictive relationship between ECa and laboratory-measured electrical conductivity (ECe) was used to predict EC with confidence (R2 between 0.82 and 0.99). A three-dimensional inverse distance weighing (3D-IDW) interpolation clearly showed a strong variability in space and time and with depths within the study field which were mainly attributed to the human management factors including irrigation, mulching, and uncovering of soils and natural factors including air temperature, evaporation, and groundwater level. This study lays a foundation of characterizing secondary salinity at a field scale for precision and sustainable management of agricultural lands in arid and semi-arid areas.

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“…(d)) and a 500 nm thick aluminum film is deposited on the SiO2 layer before the focused ion-beam (FIB) treatment. The TEM lamella is oriented along [11][12][13][14][15][16][17][18][19][20], perpendicular to the step-flow of the epitaxial layer and taken from a region of the sample where isolated macrosteps are present (Fig. 2 (a,b)).…”

Section: Oxidation At Isolated Macrostepsmentioning

confidence: 99%

“…In order to achieve electronic-grade homoepitaxies of a single polytype, an off-axis growth technique is normally applied [1], leading to microsteps along the surface [2]. Even though a range of different off-angles and tilt directions has been reported [3], the most commonly employed off-angle is 4° toward the [11][12][13][14][15][16][17][18][19][20] direction. For the (0001) Si-face, the surface exhibits a continuous step pattern with most of the microsteps having a height of either 2 or 4 bilayers [4].…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology of 4H-SiC after Thermal Oxidation

Woerle

Šimonka

Müller

et al. 2019

MSF

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Step-controlled growth of 4H-SiC epitaxial layers leads to the formation of a step-bunched morphology along the surface with larger macrosteps, composed of smaller microsteps of several Si-C bilayer heights. As thermal oxidation is an orientation-dependent process, a multi-faceted surface is expected to exhibit a different oxidation behavior compared to a perfectly planar surface. In this work, step-bunched surfaces after oxidation are investigated by high-resolution atomic force microscopy (HR-AFM) and transmission electron microscopy (TEM) indicating a morphological change in the early stages of thermal oxidation. An orientation-dependent oxidation model is used to correctly describe variations of the oxide thicknesses at isolated macrosteps.

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Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

Cited by 7 publications

References 22 publications

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

Field-Scale Characterization of Spatio-Temporal Variability of Soil Salinity in Three Dimensions

Surface Morphology of 4H-SiC after Thermal Oxidation

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