Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Kapolnek, D.; Keller, S.; Vetury, R.; Underwood, R.D.; Kozodoy, P.; Baars, S. P. Den; Mishra, Umesh K.

doi:10.1063/1.119626

Cited by 298 publications

(164 citation statements)

References 12 publications

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“…Dislocation densities as low as 7×10 8 cm -2 for threading dislocations which intersect the surface have been reported [1]. The recent innovation of lateral epitaxial overgrowth leads to a reduction in this density by several orders of magnitude in the laterally grown regions of the films [2,3], but the process is somewhat complicated. An alternate sub-strate is SiC, with 3.4% mismatch to GaN.…”

Section: Introductionmentioning

confidence: 99%

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Lee

Vidhya

Sagar

et al. 2001

Journal of Elec Materi

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The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 1 × 10 9 cm -2 for edge dislocations and < 1 × 10 6 cm -2 for screw dislocations are achieved in GaN films of 0.8 µm thickness. Mechanisms of dislocation generation and annihilation are discussed. Increasing the Ga to N flux ratio used during growth is found to improve the surface morphology. An unintentional electron concentration in the films of about 5 × 10 17 cm -3 is observed, and is attributed to excess Si in the films due to a Si-cleaning step used in the substrate preparation. Results from optical characterization are correlated with the structural and electronic studies.

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Section: Introductionmentioning

confidence: 99%

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Lee

Vidhya

Sagar

et al. 2001

Journal of Elec Materi

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“…This experimental design is similar to that employed for the initial investigations of laterally overgrown cplane GaN from linear mask openings. 14,15 The reduced symmetry of the a-GaN surface (with respect to the c-GaN surface) was apparent in the stripe orientation dependence shown in Fig. 27, a 180° .…”

Section: R3 A-plane Gan Lateral Overgrowth By Mocvdmentioning

confidence: 98%

High-Efficiency Nitride-Based Solid-State Lighting

Fini¹,

Nakamura²

2003

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In this second annual report we summarize the progress in the second-year period of Department of Energy contract #DE-FC26-01NT41203, entitled "High-Efficiency Nitride-Based Solid-State Lighting". The two teams, from the University of California at Santa Barbara (Principle Inve stigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially ava ilable LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistrie s.

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“…Then, 50 nmthick SiO 2 is deposited by plasma-enhanced chemical vapor deposition and selectively opened by photolithographic patterning and wet etching with buffered oxide etchant. The n-GaN microstructures are grown on the opening on the n-AlGaN surface by selective area growth 23,24 by metal-organic vapor phase epitaxy regrowth for 3 min at 1000 6 C at 200 mbar. The V/III ratio is 606, and the silane flow is 50 sccm.…”

Section: Fabrication Of See Duv Ledsmentioning

confidence: 99%

Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

et al. 2015

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While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a novel LEE-enhancing approach to deliver a real breakthrough. Here, we propose sidewall emission-enhanced (SEE) DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes. The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors. The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs. Accordingly, the proposed approach simultaneously improves optical and electrical properties. In addition, strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.

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Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Cited by 298 publications

References 12 publications

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

High-Efficiency Nitride-Based Solid-State Lighting

Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

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