Anisotropic Dirac cones in monoatomic hexagonal lattices: a DFT study

Rojas-Cuervo, A. M.; Romero, K. M. Fonseca; Rey‐González, R. R.

doi:10.1140/epjb/e2014-40894-9

Cited by 9 publications

(11 citation statements)

References 38 publications

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“…Nevertheless, silicene exhibits excellent electronic properties [7][8][9][10][11][12][13][14][15] similar to those of graphene [16][17][18][19][20]. Its band structure exhibits a linear dispersion and shows characteristic massless Dirac fermions with the Fermi velocity of 10 5 -10 6 ms −1 [7,12,15]. Due to strong spin-orbit coupling, the quantum spin Hall effect may be observed in silicene in an experimentally accessible temperature regime [13].…”

Section: Introductionmentioning

confidence: 99%

“…In contrast to flat graphene, silicene possesses a low-buckled structure with a buckled height of about 0.44 Å [7][8]. Nevertheless, silicene exhibits excellent electronic properties [7][8][9][10][11][12][13][14][15] similar to those of graphene [16][17][18][19][20]. Its band structure exhibits a linear dispersion and shows characteristic massless Dirac fermions with the Fermi velocity of 10 5 -10 6 ms -1 [7,12,15].…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17][18][19] Its band structure exhibits a linear dispersion and shows characteristic massless Dirac fermions with the Fermi velocity of 10 5 -10 6 ms -1 . [6,11,14] Due to strong spin-orbit coupling (SOC), the quantum spin Hall effect may be observed in silicene in an experimentally accessible temperature regime. [12] A tunable band gap can be opened up to about 4 eV in silicene by applying a perpendicular electric field [20][21] and by hydrogenation [22][23][24][25] , halogenation [26][27] , and oxidation [28][29] .…”

Section: Introductionmentioning

confidence: 99%

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Point defects in epitaxial silicene on Ag(111) surfaces

Liu

Feng

et al. 2016

2D Mater.

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Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of ~100 cm2 V−1 s−1, however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of $\sqrt{13}\times \sqrt{13}$ and $2\sqrt{3}\times 2\sqrt{3}$ silicene in experiments is revealed, and 4 x 4 silicene sheet is thought to be the most suitable structure for future device applications. , however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of 13 × 13 and 2 3 ×2 3 silicene in experiments is revealed, and 4×4 silicene sheet is thought to be the most suitable structure for future device applications. Disciplines Engineering | Physical Sciences and Mathematics2

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Point defects in epitaxial silicene on Ag(111) surfaces

Liu

Feng

et al. 2016

2D Mater.

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“…[3,4] In spite of the low buckled geometry, silicene possesses outstanding electronic properties similar to those of graphene. [1][2][3][4][5][6][7][8][9][10][11] Most importantly, silicene is a zero-gap semiconductor with linear dispersion around Fermi level, forming the famous "Dirac cone" at the symmetric point K in the reciprocal space. The charge carriers in silicene behave like massless Dirac fermions in a small energy range around the Fermi level, with a Fermi velocity of 10 5 m/s-10 6 m/s, [3,8,11] comparable to that of graphene.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism and modification of electronic and magnetic properties of silicene

Liu¹,

Han²,

Zhao

2015

Chinese Phys. B

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Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag (111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.

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“…K K′ , described in Hartree-Fock and RPA [14], as well as when using the ab initio simulations [15] is the experimental fact [14].…”

Section: Introductionmentioning

confidence: 99%

Quantum Field Theory of Graphene with Dynamical Partial Symmetry Breaking

Grushevskaya¹,

Krylov²

2014

JMP

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The quantum field theory approach has been proposed for the description of graphene electronic properties. It generalizes massless Dirac fermion model and is based on the Dirac-Hartree-Fock self-consistent field approximation and assumption on antiferromagnetic ordering of graphene lattice. The developed approach allows asymmetric charged carriers in single layer graphene with partially degenerated Dirac cones.

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Anisotropic Dirac cones in monoatomic hexagonal lattices: a DFT study

Cited by 9 publications

References 38 publications

Point defects in epitaxial silicene on Ag(111) surfaces

Point defects in epitaxial silicene on Ag(111) surfaces

Growth mechanism and modification of electronic and magnetic properties of silicene

Quantum Field Theory of Graphene with Dynamical Partial Symmetry Breaking

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