Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

Takenaka, Kosuke; Shiratani, Masaharu; Onishi, Masao; Takeshita, Manabu; Kinoshita, Toshio; Koga, Kazunori; Watanabe, Yoshihisa

doi:10.1016/s1369-8001(02)00108-7

Cited by 9 publications

(2 citation statements)

References 8 publications

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“…DLC films have widespread applications as protective coatings in several areas such as car parts, biomedical coatings and microelectromechanical systems (MEMS). We have succeeded in controlling deposition profile of Cu in trenches, and have realized sub-conformal, conformal and anisotropic deposition, for which Cu is filled preferentially from the bottom of trenches without sidewall deposition, using H-assisted plasma CVD method [6][7][8][9][10][11][12][13][14]. Recently, we have studied deposition profile of plasma CVD Cu films in trenches for nano-fabrications [6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method

et al. 2009

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We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

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Section: Introductionmentioning

confidence: 99%

Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method

et al. 2009

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“…To solve the problems associated with sub-conformal and conformal deposition, we have realized anisotropic deposition of Cu, for which Cu is filled preferentially from the bottom of trenches without being deposited on the sidewall of trenches [7,8]. Fig.…”

Section: Introductionmentioning

confidence: 99%