Anisotropic dependence of the magnetic transition on uniaxial pressure in the Kondo semiconductors 
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Hayashi, Kasumi; Umeo, Kazunori; Takeuchi, T.; Kawabata, Jo; Muro, Yuji; Takabatake, Toshiro

doi:10.1103/physrevb.96.245130

Cited by 10 publications

(13 citation statements)

References 32 publications

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“…Therefore, the metallization in Fe/Os-based CeT 2 Al 10 materials seems to be favored by both electron and hole doping. A similar feature in ρ(T ) is also seen for CeT 2 Al 10 (T = Ru and Os) under hydrostatic pressure [48]. The inset of Fig.…”

Section: A Crystal Structuresupporting

confidence: 74%

“…Upon applying pressure, the lattice parameters of CeT 2 Al 10 (T = Fe, Ru, Os) all decrease monotonically, but the response is anisotropic [55]. A decrease in the b axis lattice parameter under pressure leads to a concomitant increase in T N [48,55]. We therefore anticipate a difference in the properties of Ir and Rh-doped CeFe 2 Al 10 , due to the different behavior of the b axis lattice parameter with chemical substitution.…”

Section: A Crystal Structurementioning

confidence: 89%

“…Since the semiconducting behavior of the resistivity remains in the AFM ordered state and then disappears along with T N , the hybridization gap was thought to be essential for the unusual AFM order. Another puzzling feature is that application of uniaxial pressure P b strongly increases T N in CeT 2 Al 10 (T = Ru, Os) [48].…”

Section: Introductionmentioning

confidence: 99%

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Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

et al. 2021

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We report a systematic study of the 5d-electron-doped system Ce(Fe 1−x Ir x ) 2 Al 10 (0 x 0.15). With increasing x, the orthorhombic b axis decreases slightly while accompanying changes in a and c leave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor CeFe 2 Al 10 , the low-temperature energy gap, which is proposed to be a consequence of strong c-f hybridization, is suppressed by a small amount of Ir substitution for Fe and that the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The charge or transport gap collapses (at x = 0.04) faster than the spin gap with Ir substitution. Magnetic susceptibility, heat capacity, and muon spin relaxation measurements demonstrate that the system undergoes long-range antiferromagnetic order below a Néel temperature T N of 3.1(2) K for x = 0.15. The ordered moment is estimated to be smaller than 0.07(1) μ B /Ce, although the trivalent state of Ce is confirmed by Ce L 3 -edge x-ray absorption near edge spectroscopy. It is suggested that the c-f hybridization gap, which plays an important role in the unusually high ordering temperatures observed in CeT 2 Al 10 (T = Ru and Os), may not be necessary for the onset of magnetic order with a low T N seen here in Ce(Fe 1−x Ir x ) 2 Al 10 .

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Section: A Crystal Structuresupporting

confidence: 74%

Section: A Crystal Structurementioning

confidence: 89%

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Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

et al. 2021

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“…For hydrostatic pressures up to 1.34 GPa, a piston-cylinder pressure cell made of NiCrAl alloy and Daphne oil 7373 as a pressure transmitting medium were used. For uniaxial pressure of the configurations P B and P⊥B, two type of pressure cells were constructed [19]. Uniaxial pressures were applied on a sample plate of 0.4-0.7 mm in thickness by a homemade pressure cell made of ZrO 2 .…”

Section: Methodsmentioning

confidence: 99%

Uniaxial-Pressure-Induced Release of Magnetic Frustration in a Triangular Lattice Antiferromagnet YbCuGe

Umeo

Watanabe

Araki

et al. 2020

Metals

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We have studied the effect of geometrical frustration on the antiferromagnetic order in the Yb-based triangular lattice compound YbCuGe below TN = 4.2 K by the measurements of magnetization and specific heat under hydrostatic and uniaxial pressures. By applying hydrostatic pressure P up to 1.34 GPa, TN hardly changes. By contrast, TN increases as P is applied along the hexagonal a axis, while TN decreases by the application of P along the c axis. The increase of TN only for P‖a suggests the release of the frustration inherent in the triangular lattice of Yb ions of this compound.

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“…Since the semiconducting behavior of resistivity remains in the AFM ordered state and then disappears along with T N , the hybridization gap was thought to be essential for the unusual AFM order. Another puzzling feature is that application of P b strongly increases T N in CeT 2 Al 10 (T = Ru, Os) [47].…”

Section: Introductionmentioning

confidence: 99%

A crossover from Kondo semiconductor to metallic antiferromagnet with $5d$-electron doping in CeFe$_2$Al$_{10}$

Tripathi,

Adroja,

Lees

et al. 2021

Preprint

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We report a systematic study of the 5d-electron-doped system Ce(Fe1−xIrx)2Al10 (0 ≤ x ≤ 0.15). With increasing x, the orthorhombic b axis decreases slightly while accompanying changes in a and c leave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor CeFe2Al10, the low-temperature energy gap which is proposed to be a consequence of strong c-f hybridization, is suppressed by a small amount of Ir substitution for Fe, and that the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The charge or transport gap collapses (at x = 0.04) faster than the spin gap with Ir substitution. Magnetic susceptibility, heat capacity, and muon spin relaxation measurements demonstrate that the system undergoes long-range antiferromagnetic order below a Néel temperature, TN, of 3.1(2) K for x = 0.15. The ordered moment is estimated to be smaller than 0.07(1) µB/Ce although the trivalent state of Ce is confirmed by Ce L3-edge x-ray absorption near edge spectroscopy. It is suggested that the c-f hybridization gap, which plays an important role in the unusually high ordering temperatures observed in CeT2Al10 (T = Ru and Os), may not be necessary for the onset of magnetic order with a low TN seen here in Ce(Fe1−xIrx)2Al10.

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Anisotropic dependence of the magnetic transition on uniaxial pressure in the Kondo semiconductors CeT2Al10 ( T=Ru

Cited by 10 publications

References 32 publications

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Uniaxial-Pressure-Induced Release of Magnetic Frustration in a Triangular Lattice Antiferromagnet YbCuGe

A crossover from Kondo semiconductor to metallic antiferromagnet with $5d$-electron doping in CeFe$_2$Al$_{10}$

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