2023
DOI: 10.1039/d3nr03508e
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Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

Hui Yuan,
Ruihan Xu,
Jiale Ren
et al.

Abstract: 2D material-based van der Waals heterostructures (vdWhs) have shown great potential in the next-generation multi-functional microelectronic devices. Thanks to sharp interface and ultrathin thickness, 2D p-n junctions with high rectification...

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