Anisotropic and valley-resolved beam-splitter based on a tilted Dirac system

Zhou, Xixuan; Zheng, Jianlong; Zhai, Feng

doi:10.1088/1572-9494/ac6fc2

Cited by 7 publications

(4 citation statements)

References 45 publications

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“…6 For a typical tilted Dirac system (8-Pmmn borophene), the valley-resolved lateral shift of electrons traversing an n-pn junction was studied theoretically. [101] We derive a gaugeinvariant formula on the GH shift of transmitted beams, which holds for any anisotropic isoenergy surface. Due to the similarity between the tilting effect of the Dirac cone and straininduced vector potential in graphene, valley double refraction also occurs at the considered n-p interface.…”

Section: Goos-hänchen Shift In Strained Graphenementioning

confidence: 99%

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Zheng 郑,

Zhai 翟

2024

Chinese Phys. B

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The presence of two sublattices in hexagonal graphene brings two energetically degenerate extremes in the conduction and valence band, which are identified by the valley quantum number. Recently, this valley degree of freedom has been suggested to encode and process information, which develops a new carbon-based electronics named graphene valleytronics. In this topical review, we present and discuss valley-related transport properties in bulk graphene monolayers, which are due to strain-induced pseudomagnetic fields and associated vector potential, sublattice-stagger potential, and the valley-Zeeman effect. These valley-related interactions can be utilized to obtain valley filtering, valley spatial separation, valley-resolved guiding modes, and valley-polarized collective modes such as edge or surface plasmons. The present challenges and the perspectives on graphene valleytronics are also provided in this review.

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Section: Goos-hänchen Shift In Strained Graphenementioning

confidence: 99%

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Zheng 郑,

Zhai 翟

2024

Chinese Phys. B

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“…It supplies more opportunities in valleytronics. Recently, valley-contrasting Goos-Hänchen shift, gate-tunable valley filtering, and valley-resolved beam-splitter have been found in the tilted Dirac system [26][27][28]. With attention to the valley dependent device applications, there is reason to believe that 8-Pmmn borophene will provide a good material platform, and show significant advantages in some respects comparing with graphene.…”

Section: Introductionmentioning

confidence: 99%

Valley-polarized and supercollimated electronic transport in an 8-Pmmn borophene superlattice

Fang

Jin

2023

New J. Phys.

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Analogous to real spins, valleys as carriers of information can play significant roles in physical properties of two-dimensional Dirac materials. On the other hand, utilizing external periodic potential is an efficient method to manipulate their band structures and transport properties. In this work, we investigate the valley dependent optics-like behaviors based on an 8-Pmmn borophene superlattice with the transfer matrix method and effective band approach. Firstly, it is found that the band structure is renormalized, more tilted Dirac cones are generated, and the group velocities are modified by the periodic potentials. Secondly, due to the exotic tilted Dirac cones in 8-Pmmn borophene, a perfect valley selected angle filter can be realized. The electrons with a specific incident angle can transmit completely in an energy window, which is flexibly tunable by changing the periodic potential. Thirdly, by using the Green's function to simulate the time evolution of wave packets, electrons can be shown to propagate without any diffraction, valley electron beam supercollimation happens by modulating the potential parameters. Different from the graphene superlattice, the electron supercollimation here is valley dependent and can be used as a valley electron beam collimator. Fourthly, we can tune the polarization and supercollimation angles by changing the superlattice direction. These intriguing results in an 8-Pmmn borophene-based superlattice offer more opportunities in diverse electronic transport phenomena and may facilitate the devices applications in valleytronics and electron-optics.

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“…In 2D materials based-systems, the spintronic properties can be controlled by the Rashba interaction, which can be adjusted by an external electric field [25]. The transport properties in the structures based on the 8-Pmmn borophene have been extensively investigated over the recent years [26][27][28][29][30][31][32][33][34][35][36][37]. The anomalous heat transport through 8-Pmmn borophene sheet has been studied by Sengupta et al [28].…”

Section: Introductionmentioning

confidence: 99%

“…It is found that, Goos-Hänchen-like shift in this structures has a strong dependence on the direction of the junctions. Anisotropic transmission and valleydependent transport properties through 8-Pmmn borophenebased n-p-n junction have been investigated theoretically by Zhou et al in [36]. It is demonstrate that, valley-polarization current depends on the incident electron angle and energy of the incident electron as well as junction parameters.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Rashba interaction on the tunneling time and Hartman effect in an 8-Pmmn borophene superlattice

Sattari

2023

J. Phys.: Condens. Matter

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The spin-dependent group delay time and Hartman effect as well as the valley/spin polarization in an 8-Pmmn borophene superlattice under Rashba interaction are investigated theoretically, by using the stationary phase and the transfer matrix approaches. The group delay time depends on the spin degree of freedoms, and can be effectively controlled by changing the direction of superlattice, incident electron angle and Rashba strength. Both the valley and spin polarization reveal a strong dependence on the number of the superlattice barriers. Furthermore, group delay time oscillates as the width of the potential barriers increases, but in special conditions, the dependence on the width of the potential barriers will disappear. Interestingly, by increasing the angle of the direction of the superlattice the Hartman effect can be observed for most electron incidence angles. Our study show that, the 8-Pmmn borophene superlattice can be useful for future electronics and spintronics applications. 

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Anisotropic and valley-resolved beam-splitter based on a tilted Dirac system

Cited by 7 publications

References 45 publications

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Valley-polarized and supercollimated electronic transport in an 8-Pmmn borophene superlattice

Effect of the Rashba interaction on the tunneling time and Hartman effect in an 8-Pmmn borophene superlattice

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