2021
DOI: 10.1021/acs.jpcc.1c02738
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Anharmonicity and Effect of the Nanostructuring on the Lattice Dynamics of CrSi2

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Cited by 7 publications
(6 citation statements)
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“…The broadening of Raman bands could be explained by both the nanostructuration and the increase in defect contents in the crystal structure [28] induced during the mechanical milling. Moreover, this is characteristic of a lower relaxation time [29]. We consequently expect a lower thermal conductivity for nanostructured sample S2.…”
Section: Lattice Dynamic Of Bulk and Nanostructured β-Fesi2mentioning
confidence: 81%
“…The broadening of Raman bands could be explained by both the nanostructuration and the increase in defect contents in the crystal structure [28] induced during the mechanical milling. Moreover, this is characteristic of a lower relaxation time [29]. We consequently expect a lower thermal conductivity for nanostructured sample S2.…”
Section: Lattice Dynamic Of Bulk and Nanostructured β-Fesi2mentioning
confidence: 81%
“…Although this class of materials presents intrinsically good electronic properties, their ZT remains lower (<0.4) than the state-of-theart materials due to relatively high thermal conductivities. In order to decrease κ, important research efforts leading to a significant improvement of the properties have been conducted recently mostly using strategies such as alloying [21], texturization [22], nanostructuration [23,24], or composite synthesis [25]. Despite the remarkable advances made on these materials, their integration into functional devices remains limited mostly because the realization of good-quality contacts is challenging and, thus, not well documented in the literature.…”
Section: Introductionmentioning
confidence: 99%
“…However, the transition-metal (Ni/Cr)-derived 3 d states hybridize with the main group element (Si/Ge)-derived p states to form p–d bonding states, and the strength of the bonding depends on the virtual position of the p and d orbitals . The high γ E value calculated for the Cr–Si bond from the data obtained by EXAFS is corroborated by a recent investigation by Moll et al using DFT, which demonstrates strong anharmonicity by the Cr–Si bond in nanostructured CrSi 2 , where the optical phonon also contributes to the reduction of lattice thermal conductivity . In addition, the exceptional high γ E for the Cr–Ge bond can be attributed to the hybridization of the Cr 3 d orbital and the Ge 4 p orbital .…”
Section: Resultsmentioning
confidence: 60%
“…35 The high γ E value calculated for the Cr−Si bond from the data obtained by EXAFS is corroborated by a recent investigation by Moll et al using DFT, which demonstrates strong anharmonicity by the Cr−Si bond in nanostructured CrSi 2 , where the optical phonon also contributes to the reduction of lattice thermal conductivity. 53 In addition, the exceptional high γ E for the Cr−Ge bond can be attributed to the hybridization of the Cr 3d orbital and the Ge 4p orbital. 54 However, the nature of the hybridization is such that more number of unpaired electrons resides on Cr, which contributes to high magnetic moment and thus high anharmonicity and high electron−phonon scattering that is one of the cruxes in condensed matter physics.…”
mentioning
confidence: 99%