Abstract:conditions, and recent improvements in their synthesis approaches allow producing high-quality samples suitable both for spectroscopic investigation and device fabrication. [3][4][5] In particular, the excitonic behavior of [AgSePh] ∞ , a prototypical MOC, has just been investigated by us, [6,7] and two other groups, [8][9][10] highlighting strongly bound anisotropic resonances with blue, direct gap emission and very short lifetime. This short exciton lifetime is peculiar and could be potentially leveraged for… Show more
“…To estimate the strength of this Fröhlich interaction we follow the approach described in ref ( 42 ). We consider the presence of Wannier excitons which is confirmed by Pastorino et al 43 showing that the wave function of the first bright exciton in GeS is highly delocalized and spreads over several atomic layers.…”
Germanium monosulfide with an anisotropic puckered crystalline
structure has recently attracted much attention due to its unique
optical and electronic properties; however, exciton–phonon
interactions were only superficially elucidated. We study the resonant
Raman scattering and the photoluminescence of the optically active
Γ-exciton in layered GeS flakes and evaluate the exciton and
phonon responses on variations in the excitation energy, laser-light
and emission polarizations, temperature, and laser power. A double-resonance
mechanism allows for observing Raman forbidden (dark) first- and second-order
longitudinal-optical phonon modes whose symmetries and energies are
moreover calculated by density functional perturbation theory. For
(quasi)-resonant exciton excitation, the selection rules become relaxed
so that a fourth-order Fröhlich intraband process is mediated
by the scattering of the electron with a longitudinal-optical and
an acoustic phonon. Our results demonstrate considerable coupling
between phonons and photogenerated carriers in GeS flakes and the
high efficiency of multiorder scattering in optical processes.
“…To estimate the strength of this Fröhlich interaction we follow the approach described in ref ( 42 ). We consider the presence of Wannier excitons which is confirmed by Pastorino et al 43 showing that the wave function of the first bright exciton in GeS is highly delocalized and spreads over several atomic layers.…”
Germanium monosulfide with an anisotropic puckered crystalline
structure has recently attracted much attention due to its unique
optical and electronic properties; however, exciton–phonon
interactions were only superficially elucidated. We study the resonant
Raman scattering and the photoluminescence of the optically active
Γ-exciton in layered GeS flakes and evaluate the exciton and
phonon responses on variations in the excitation energy, laser-light
and emission polarizations, temperature, and laser power. A double-resonance
mechanism allows for observing Raman forbidden (dark) first- and second-order
longitudinal-optical phonon modes whose symmetries and energies are
moreover calculated by density functional perturbation theory. For
(quasi)-resonant exciton excitation, the selection rules become relaxed
so that a fourth-order Fröhlich intraband process is mediated
by the scattering of the electron with a longitudinal-optical and
an acoustic phonon. Our results demonstrate considerable coupling
between phonons and photogenerated carriers in GeS flakes and the
high efficiency of multiorder scattering in optical processes.
“…To estimate the strength of this Fröhlich interaction we follow the approach described in Ref. 42. We consider the presence of Wannier excitons which is con rmed by Pastorino et al [43] showing that the wave function of the rst bright exciton in GeS is highly delocalized and spreads over several atomic layers.…”
Semiconducting layered group-IV monochalcogenides such as black phosphorous and germanium monosulfide with an anisotropic puckered crystalline structure in each layer have recently attracted much attention due to their unique optical and electronic properties. However, exciton-phonon interactions were only superficially elucidated, although they tremendously affect the opto-electronic operation principles and performance. We study the resonant Raman scattering and the photoluminescence of the optically active Γ-exciton in layered GeS flakes and evaluate the exciton and phonon responses on variations in the excitation energy, laser-light and emission polarizations, temperature, and laser power. The resonant Raman scattering leads to the observation of dark first- and second-order optical phonon modes whose symmetries and energies are calculated by means of a density functional perturbation theory. We reveal a double-resonance mechanism activating the Raman forbidden (dark) longitudinal-optical scattering processes: For (quasi)-resonantly exciting excitons in the GeS flakes the selection rules become relaxed so that a fourth-order Fröhlich intraband process is mediated by the scattering of the electron with a longitudinal-optical and an acoustic phonon. Our experiments demonstrate considerable coupling between phonons and photogenerated carriers in GeS flakes and the high efficiency of multi-order scattering in optical processes, and outline that layered GeS as direct band-gap semiconductor provides a promising material system for opto-electronic applications.
“…[1,3] More recent work has highlighted that atomic motions transcending the harmonic phonon picture can heavily influence the optoelectronic properties of many different classes of emerging semiconductors, including organic crystals, [4] halide perovskites [5][6][7][8][9][10][11][12][13][14][15][16] and both metal oxides [17][18][19] and chalcogenides. [20,21] Indeed, updated microscopic understanding is now being generated to elucidate how more complicated atomic motion -captured in the framework of anharmonic lattice dynamics -can trigger interesting consequences for key physical quantities, such as the fundamental bandgap, [5,6,12,14,15] structural phase transitions, [22][23][24] and nature of quasi-particle excitations. [21,25] Ternary nitride semiconductors are fascinating materials and offer a versatile range of desirable properties for sustainable energy conversion, including solar energy harvesting, thermoelectrics, and solid-state lighting.…”
Section: Introductionmentioning
confidence: 99%
“…[20,21] Indeed, updated microscopic understanding is now being generated to elucidate how more complicated atomic motion -captured in the framework of anharmonic lattice dynamics -can trigger interesting consequences for key physical quantities, such as the fundamental bandgap, [5,6,12,14,15] structural phase transitions, [22][23][24] and nature of quasi-particle excitations. [21,25] Ternary nitride semiconductors are fascinating materials and offer a versatile range of desirable properties for sustainable energy conversion, including solar energy harvesting, thermoelectrics, and solid-state lighting. [26][27][28][29] Compared to intensively studied metal oxide compounds, nitrides offer narrower bandgaps for efficient light absorption, along with increased covalent character that can enhance long-range charge transport.…”
Section: Introductionmentioning
confidence: 99%
“…[ 20,21 ] Indeed, updated microscopic understanding is now being generated to elucidate how more complicated atomic motion – captured in the framework of anharmonic lattice dynamics – can trigger interesting consequences for key physical quantities, such as the fundamental bandgap, [ 5,6,12,14,15 ] structural phase transitions, [ 22–24 ] and nature of quasi‐particle excitations. [ 21,25 ]…”
Ternary nitride semiconductors are rapidly emerging as a promising class of materials for energy conversion applications, offering an appealing combination of strong light absorption in the visible range, desirable charge transport characteristics, and good chemical stability. In this work, it is shown that finite‐temperature lattice dynamics in CuTaN2 – a prototypical ternary nitride displaying particularly strong visible light absorption – exhibit a pronounced anharmonic character that plays an essential role in defining its macroscopic optoelectronic and thermal properties. Low‐frequency vibrational modes that are Raman‐inactive from symmetry considerations of the average crystal structure and unstable in harmonic phonon calculations are found to appear as intensive Raman features near room temperature. The atomic contributions to the anharmonic vibrations are characterized by combining Raman measurements with molecular dynamics and density functional theory calculations. This analysis reveals that anharmonic lattice dynamics have large ramifications on the fundamental properties of this compound, resulting in uniaxial negative thermal expansion and the opening of its bandgap to a near‐optimal value for solar energy harvesting. The atomic‐level understanding of anharmonic lattice dynamics, as well as the finding that they strongly influence key properties of this semiconductor at room temperature, have important implications for design of new functional materials, especially within the emerging class of ternary nitride semiconductors.
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