Angular distribution of surface excitations for electrons backscattered from Al and Si surfaces

Werner, Wolfgang; Smekal, Werner; Cabela, Thomas; Eisenmenger‐Sittner, Christoph; Störi, H.

doi:10.1016/s0368-2048(00)00264-4

Cited by 20 publications

(5 citation statements)

References 21 publications

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“…A similar result has been found recently for two representatives of the class of NFE materials: Al and Si. 20 The corresponding values for Si and Al were found to coincide quite well with the result expected for NFE materials a/a NFE D 1 : a Si /a NFE D 0.79 š 0.05 and a Al /a NFE D 0.67 š 0.05. 20 After having summarized our results in a convenient form (Eqn.…”

Section: Resultssupporting

confidence: 78%

“…20 The corresponding values for Si and Al were found to coincide quite well with the result expected for NFE materials a/a NFE D 1 : a Si /a NFE D 0.79 š 0.05 and a Al /a NFE D 0.67 š 0.05. 20 After having summarized our results in a convenient form (Eqn. (10)), a comparison of the present results with the expression given by Tung (Eqn.…”

Section: Resultssupporting

confidence: 78%

“…More details are reported in Ref. 20 Figure 2 shows the REELS spectrum for 3400 eV electrons backscattered from a gold surface. The solid line is the fit of the raw data to Eqn.…”

Section: Methodsmentioning

confidence: 99%

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Angular distribution of the surface excitation probability for medium‐energy electrons backscattered from a polycrystalline Au surface

Werner¹,

Smekal²,

Störi³

2001

Surface & Interface Analysis

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Reflection electron energy-loss spectra have been measured for medium-energy electrons backscattered from a polycrystalline Au surface for emission angles between 15 and 90• with respect to the surface normal as well as for incidence angles in the same range. The surface excitation parameter (SEP) was extracted from each spectrum by fitting the raw data to theory and determining the ratio of the first surface loss peak to the elastic peak intensity. Both the energy and angular dependence of the SEP can be described by free electron theory when the electron momentum is rescaled by a material-dependent parameter allowing the SEP in Au to be predicted for medium energies and arbitrary geometries.

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Section: Resultssupporting

confidence: 78%

Section: Resultssupporting

confidence: 78%

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Angular distribution of the surface excitation probability for medium‐energy electrons backscattered from a polycrystalline Au surface

Werner¹,

Smekal²,

Störi³

2001

Surface & Interface Analysis

Self Cite

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show abstract

“…Such calculations, however, only approximately satisfied the conservations of energy and momentum due to the use of cylindrical coordinates that carried no restriction on the normal component of momentum transfer [15,16]. Later, Werner et al [17][18][19] rescaled the electron momentum in Oswald's free-electron theory [20] by material-dependent parameters to estimate the SEP for an arbitrary material. They listed these parameters for some materials [18], but did not include semiconducting III-V compounds.…”

Section: Introductionmentioning

confidence: 99%

Angular and energy dependences of the surface excitation parameter for semiconducting III–V compounds

Kwei

Tung

2007

Surface Science

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“…1 -5 Much less has been published on experiments 6 -13 using EPES 7,8 , REELS 6,9,10,12,13 and angular REELS. 11 Very few P se experimental data have been published. Apart from the surface monolayer (ML), the inelastic mean free path (IMFP) is nearly constant in the bulk of the solid.…”

Section: Introductionmentioning

confidence: 99%

Experimental estimation of surface excitation parameter for surface analysis

Gergely

Menyhárd

Gurban

et al. 2002

Surface & Interface Analysis

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The surface excitation produced by impinging or escaping electrons is a competitive process to elastic backscattering. It affects the intensity of Auger and XPS peaks and is characterized by the surface excitation parameter P se . This appears in the surface loss peak I.E pls /, and possibly a surface plasmon. In our work P se is defined as the ratio of the probability to create a surface plasmon/elastic scattering and is deduced from the integrated surface loss peak and elastic peak, respectively. Our procedure is based on reflection electron energy loss spectroscopy and elastic peak electron spectroscopy spectra and Kl i spectra (K is the inelastic scattering cross-section and l i is the inelastic mean free path), determined using Tougaard's method. The normalized Kl i curves are fitted to the spectrum at E = 5 keV (primary energy) and E L = E pl1 (volume plasmon), approximated with the Lorentzian type three-parameter formula of Tougaard. For E > E pl1 , the normalized curves are overlapping and P se is deduced from the integrated difference spectra fitted with the Tougaard cross-sections. The procedure was applied on materials exhibiting surface and volume plasmons: III-V semiconductors (GaAs, InSb) and In and Sb metals. The REELS experiments were carried out with an ESA 31 HSA spectrometer covering the E = 0.2-5 keV energy range.

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Angular distribution of surface excitations for electrons backscattered from Al and Si surfaces

Cited by 20 publications

References 21 publications

Angular distribution of the surface excitation probability for medium‐energy electrons backscattered from a polycrystalline Au surface

Angular distribution of the surface excitation probability for medium‐energy electrons backscattered from a polycrystalline Au surface

Angular and energy dependences of the surface excitation parameter for semiconducting III–V compounds

Experimental estimation of surface excitation parameter for surface analysis

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