Angular distribution of electrons from low-frequency above-threshold ionization

Baruch, M. C.; Gallagher, T. F.

doi:10.1103/physreva.44.5803

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…when the y field component lags behind or leads the x-component by δ degrees. This phase can also be tuned to obtain linearly or circularly polarized light [11], in contrast to the usual harmonic phase control [12,13] where some difficulty arises if one wants to observe the quantum phase shift difference of the outgoing waves, using that laser phase [14]. Our aim here is to consider the dependence of the angular distribution on both ellipticity parameters χ and δ.…”

Section: Introductionmentioning

confidence: 99%

Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

Faye¹,

Wane²

2011

J. Phys. B: At. Mol. Opt. Phys.

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We study the ellipticity and the dependence on the phase lag (lead) (between the semimajor and the semiminor axes of the field components) of the photoelectron angular distribution (PAD) in the non-resonant two-photon ionization of atomic hydrogen. We establish exact analytical expressions for azimuthal PAD for 3s, 3p and 3d excited initial states, marked by the occurrence of an asymmetric term. This term gives rise to elliptic dichroism (ED), which can be obtained in two ways: either with the left (versus right) ellipticity, or with the phase lag (versus lead); for 3s and 3p initial states, it is shown that the quantum phase of continua is directly related to the phase lag, one-photon below-threshold ionization, and indirectly one photon above. Another important result is that the magnetic sublevels, m = 0, for 3p and m = ±1, for 3d, do not contribute to the azimuthal PAD. Our numerical results show, for 3s and 3d, and near-threshold ionization, that the PAD has maxima either along the semimajor or the semiminor axis, while for above-threshold ionization, they are always shifted from these axes. However, the maxima of the corresponding ED coincide with the PAD maxima, while for 3p, they are shifted from the PAD minima. A strong dependence of the ED sign is noted, regardless of the state or the process. However, strong ED signals are obtained for the 3s initial state and below-threshold ionization.

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Section: Introductionmentioning

confidence: 99%

Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

Faye¹,

Wane²

2011

J. Phys. B: At. Mol. Opt. Phys.

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Beyond (1D + time) dynamics in the microwave ionization of excited H atoms: surprises from experiments with collinear static and linearly polarized electric fields

Koch¹,

Galvez²,

Zelazny³

1999

Physica D: Nonlinear Phenomena

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Microscopic mechanism of atomic diffusion in Si under pressure

Sugino

Oshiyama

1992

Phys. Rev. B

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We have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the interstitial mechanism, on the other hand, the formation energy of the interstitial impurity shows a general tendency to increase with pressure. Combining the results with the experimental data, we have concluded that there is a dominant contribution of the vacancy mechanism for the As diffusion. The microscopic origin of the pressure dependence is clarified in terms of the local strain around the defects. The negative pressure dependence common to the group-V impurities for the vacancy-mediated diffusion is well explained by the peculiar nature of the isolated vacancy: (a) breathing distortion of the surrounding Si atoms toward the vacancy site, which gives rise to a tensile strain around the vacancy, and (b) the characters of the wave function and the lattice distortion originating from the vacancy, which cause the weak vacancy-impurity interaction. The positive pressure dependence for the interstitial-mediated diffusion is closely related to the atomic structures of the interstitial impurities which cause compressive strain to the surrounding Si-Si bonds.

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Angular distribution of electrons from low-frequency above-threshold ionization

Cited by 3 publications

References 12 publications

Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

Beyond (1D + time) dynamics in the microwave ionization of excited H atoms: surprises from experiments with collinear static and linearly polarized electric fields

Microscopic mechanism of atomic diffusion in Si under pressure

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