Angular-dependent oscillations of the magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>Se</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>due to the three-dimensional bulk Fermi surface

Eto, Kazuma; Ren, Zhi; Taskin, A. A.; Segawa, Kouji; Ando, Yoichi

doi:10.1103/physrevb.81.195309

Cited by 207 publications

(245 citation statements)

References 43 publications

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“…Checkelsky et al 75 performed transport experiments on Ca-doped samples noting an increase in the resistivity, but concluded that surface state conduction alone could not be responsible for the smallness of the resistivities observed at low temperature. Eto et al 76 79 reported signatures of ambipolar transport analogous to graphene. However, in this work also, two contributions to transport were found, the bulk contribution was subtracted so as to obtain the surface contribution, and the surface effect was observed only for top gate voltage sweeps, not back gate sweeps.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional surface charge transport in topological insulators

et al. 2010

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We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the Fermi energy εF and transport scattering time τ satisfy εF τ / 1, but εF lies below the bottom of the conduction band. Our theory is based on the spin density matrix and takes the quantum Liouville equation as its starting point. The scattering term is determined to linear order in the impurity density ni and explicitly accounts for the absence of backscattering, while screening is included in the random phase approximation. The main contribution to the conductivity is ∝ n −1 i and has different carrier density dependencies for different forms of scattering, while an additional contribution is independent of ni. The dominant scattering angles can be inferred by studying the ratio of the transport time to the Bloch lifetime as a function of the Wigner-Seitz radius rs. The current generates a spin polarization that could provide a smoking-gun signature of surface state transport. We also discuss the effect on the surface states of adding metallic contacts.

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Section: Introductionmentioning

confidence: 99%

Two-dimensional surface charge transport in topological insulators

et al. 2010

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“…9,10 However, no surface-isolated conduction has been observed for this binary compound even with the low carrier density realized by the hole doping. [24][25][26] One of the reasons for the dominant bulk conductance might be ascribed to its band structure, where the Dirac point of the topological surface state is located at or below the bulk valence-band maximum. Actually, the surface-to-bulk scattering has been directly observed by scanning tunneling microscopy.…”

Section: Introductionmentioning

confidence: 99%

Observation of a highly spin-polarized topological surface state in GeBi2Te4

et al. 2012

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Spin polarization of a topological surface state for GeBi 2 Te 4 , the newly discovered three-dimensional topological insulator, has been studied by means of state-of-the-art spin-and angle-resolved photoemission spectroscopy. It has been revealed that the disorder in the crystal has a minor effect on the surface-state spin polarization, which is 70% near the Dirac point in the bulk energy gap region (∼180 meV). This finding promises not only to realize a highly spin-polarized surface-isolated transport but also to add functionality to its thermoelectric and thermomagnetic properties.

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“…However, bulk conduction can interfere with the surface transport if the Fermi energy is not well positioned in the gap of the bulk excitation spectrum. [8][9][10][11] Therefore, various attempts have been made to control the Fermi energy and reduce the bulk carrier number and conductivity resulting in a semiconducting (insulating) temperature dependence of the resistivity from bulk electronic states and extending the study of binary bismuth chalcogenides to the ternary compound, Bi 2 Te 2 Se. [12][13][14] The controlled removal of excess electrons was achieved by Sn doping and Bi excess in Bi 2 Te 2 Se.…”

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confidence: 99%

Shubnikov–de Haas oscillations from topological surface states of metallicBi2Se2.1Te0.9

et al. 2014

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We have studied the quantum oscillations in the conductivity of metallic, p-type Bi2Se2.1Te0.9. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities characterizing the surface conduction are calculated employing the Lifshitz-Kosevich theory. The low value of the Fermi energy with respect to the Dirac point is consistent with the metallic character of the bulk hole carriers. We conclude that, due to the peculiar shape of the valence band, the Shubnikov-de Haas oscillations of the bulk carriers are shifted to higher magnetic fields which allows for the detection of the quantum oscillations from the topological surface states at lower field.

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Angular-dependent oscillations of the magnetoresistance inBi2Se3due to the three-dimensional bulk Fermi surface

Cited by 207 publications

References 43 publications

Two-dimensional surface charge transport in topological insulators

Two-dimensional surface charge transport in topological insulators

Observation of a highly spin-polarized topological surface state in GeBi2Te4

Shubnikov–de Haas oscillations from topological surface states of metallicBi2Se2.1Te0.9

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