Angular Dependence of Giant Magnetoresistance in Magnetic Multilayered Structures

Vedyayev, A.; Diény, B.; Ryzhanova, N.; Genin, Joseph; Cowache, C.

doi:10.1209/0295-5075/25/6/012

Cited by 64 publications

(25 citation statements)

References 14 publications

(10 reference statements)

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“…These results show that there is a simple cos ϕ dependence in the limit when the mean free path of the electrons is large compared to the thickness of the layers [1]. When the role of the variation of the lattice potential from layer to layer is included in the free electron models, one finds deviations from the cos ϕ dependence [2], but no clear trends have been established. For example, Vedyayev et al (see Ref.…”

Section: Introductionmentioning

confidence: 90%

“…For example, Vedyayev et al (see Ref. [2]) discussed the general case with both spin-dependent scattering and potential barriers between successive layers for a spin valve structure, and showed that when the spin-dependent lattice potential is included, the resistivity is no longer a linear function of cos ϕ. For current in the plane of the layers (CIP), experiments have found for the most part, the simple cos ϕ behavior [3]; however for current perpendicular to the plane of the layers (CPP), significant deviations have been established [4].…”

Section: Introductionmentioning

confidence: 99%

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On the orientational dependence of giant magnetoresistance

et al. 1999

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Abstract. The functional dependence of the giant magnetoresistance (GMR) with respect to the relative angle between the orientations of the magnetization in the magnetic slabs of a trilayer system is calculated by using the Kubo-Greenwood formula for electrical transport together with the fully-relativistic spinpolarized screened Korringa-Kohn-Rostoker method for semi-infinite systems and the coherent potential approximation. It is found that the functional dependence of the GMR is essentially of the form (1−cos ϕ). PACS

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

On the orientational dependence of giant magnetoresistance

et al. 1999

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“…18 The nonlinearities were associated with asymmetrical features of 024421-3 the structure, such as different FM layers, spin-dependent potentials at interfaces, and device boundaries. 10,19 Our CIP geometry results show directly that the linear behavior of MR with cos φ is valid in the whole angular range. This is direct experimental evidence that the magnetoresistive response depends on the intrinsic anisotropy of a multilayer structure through its angular-dependent magnetization reversal processes, and, ultimately, that it relies on the relative orientation of the FM layers.…”

Section: Mr (%)mentioning

confidence: 51%

Magnetization reversal signatures in the magnetoresistance of magnetic multilayers

et al. 2012

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The simultaneous determination of magnetoresistance and vectorial-resolved magnetization hysteresis curves in a spin valve structure reveals distinct magnetoresistive features for different magnetic field orientations, which are directly related to the magnetization reversal processes. Measurements performed in the whole angular range demonstrate that the magnetoresistive response originates from the intrinsic anisotropic angular dependence of the magnetization orientation between the two ferromagnetic layers. This also provides direct proof that the spin-dependent scattering in the bulk of the magnetic layers is at the origin of the magnetoresistive signal. Large magnetoresistance (MR) effects observed in ferromagnetic (FM) layers separated by nonmagnetic (NM) spacers have attracted sustained interest over the past decades for both fundamental and technological reasons. 1,2 The effects originate from spin-dependent scattering processes affecting electrons that travel across multilayered structures with different relative magnetization orientation between adjacent FM layers. 3 To observe large MR responses, one has to reorient the magnetization of the FM layers relative to one another, either by applying external magnetic fields (i.e., direct magnetic torque on the local magnetization) 1,5 or by injecting spin polarized currents (i.e., via transfer of angular momentum between the spin polarized conduction electrons and the local magnetization). 6,7 The maximum MR value is expected when the magnetic configuration of the FM layers reorients from a fully parallel (P) to a fully antiparallel (AP) configuration.Even though it is commonly assumed that the MR depends on the magnetic anisotropy of the multilayer structure, clear experimental proof of the direct relationship between the magnetoresistive behavior and the magnetization reversal processes, which determine the magnetic configuration of the FM layers, is still lacking. This is due to experimental limitations. Reported experiments rely on magnetization or MR hysteresis curves acquired independently 1-11 or in measurements performed at a fixed angle of the applied field, normally close to the easy axis (e.a.) direction, recording only the parallel component of the magnetization curve. As a consequence, widely different field-dependent magnetoresistive behaviors, including maximum MR values and curve shapes, are unexpectedly found for multilayers with similar structures.To tackle these limitations, we employ a magnetoresistanceoptical Kerr effect [M(R)-OKE] setup that allows us to determine simultaneously magnetoresistive responses and magnetization reversal processes. In this paper, we show that both amplitudes and shapes of the MR curves of a spin-valve structure, i.e., a magnetically free-FM layer, a NM spacing layer, and a pinned-FM layer, which is exchange-coupled to an antiferromagnetic (AFM) layer, 4 depend on the orientation of the applied magnetic field and are directly related to the magnetization reversal processes. The results directly show that the ...

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“…В общем случае неколлинеарной намагниченности функция Грина представляет собой матрицу размером 2 × 2 [5]. При построении функции Грина многослойной системы приходится решать ряд задач, обусловленных геометрией исследуемой си-стемы: сшивка на границах между слоями, наложение граничных условий.…”

Section: Introductionunclassified

Одноэлектронная Функция Грина Многослойных Магнитных Систем

Ведяев¹,

Vedyaev²,

Журавлев³

2006

ТМФ

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ОДНОЭЛЕКТРОННАЯ ФУНКЦИЯ ГРИНА МНОГОСЛОЙНЫХ МАГНИТНЫХ СИСТЕМПредложен метод построения симметричной одноэлектронной функции Гри-на магнитной многослойной системы с произвольным направлением однородной намагниченности магнитных слоев. Показано, что построенная функция Грина допускает наложение определенных граничных условий.Ключевые слова: функция Грина, магнитная многослойная система, неколлинеарная магнитная структура, обыкновенные дифференциальные уравнения. ВВЕДЕНИЕСреди различных подходов к исследованию транспортных свойств магнитных многослойных наносистем те, что основаны на построении функции Грина, позво-ляют наиболее полно исследовать электронную проводимость магнитных слоистых наноструктур. Функции Грина используются как при численном счете, основан-ном на первых принципах [1], так и при модельных исследованиях, позволяющих качественно описать новые явления в магнитных наноструктурах [2]- [4].В общем случае неколлинеарной намагниченности функция Грина представляет собой матрицу размером 2 × 2 [5]. При построении функции Грина многослойной системы приходится решать ряд задач, обусловленных геометрией исследуемой си-стемы: сшивка на границах между слоями, наложение граничных условий. Все это делает процедуру построения функции Грина многослойной магнитной систе-мы с неколлинеарной намагниченностью нетривиальной задачей даже в простейшей модели, когда в каждом слое электроны описываются как свободные электроны в постоянном потенциале с обменным расщеплением спиновых подзон. Еще одной проблемой, возникающей при построении функции Грина, является вопрос о ее сим-метрии относительно перестановки аргументов.Построению функции Грина многослойной системы уделялось немало внимания [6]- [10]. В частности, в работах [6], [7] предложен способ сшивки на границах между * Московский государственный университет, Москва, Россия.

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Angular Dependence of Giant Magnetoresistance in Magnetic Multilayered Structures

Cited by 64 publications

References 14 publications

On the orientational dependence of giant magnetoresistance

On the orientational dependence of giant magnetoresistance

Magnetization reversal signatures in the magnetoresistance of magnetic multilayers

Одноэлектронная Функция Грина Многослойных Магнитных Систем

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