Andreev Reflection and Creation of Spin-Entangled Charge Carriers in Double Barrier Junctions

Abstract

We discuss spin dependent single particle charge transport as well as the spin pairwise entanglement processes in a double barrier junction. The junction consists of a superconductor connected to two normal or spin-polarized conductors, or semiconductors. Special attention is focused on a non-local process known as a crossed Andreev reflection. The non-local Andreev reflection occurs when an incident electron (hole) from one lead, injected with a subgap energy onto a superconducting layer, transforms into an Andreev hole (electron) in the second lead. At the same time, a Cooper pair is created in the superconductor. Using the Bogolubov-de Gennes equation with appropriate boundary conditions we calculate and discuss probabilities of processes relevant for charge transport through the junction. The dependence of the tunneling charge transport on the strength and orientation of the exchange field in the ferromagnetic electrodes, and on the height of the tunnel barriers as well as on the distance between the electrodes are presented. We discuss briefly the physics of creation and charge transport of spin entangled electron-hole pairs in the junction.

Tunneling Charge Transport in Graphene-Based Superconductor Junctions

“…In the following we use the formalism of Ref. [6] that was generalized to the spin dependent quantum transport in non-graphene [7,8] and graphene based (e.g. Refs.…”