Anderson localization of graphene by helium ion irradiation

Naitou, Yuichi; Ogawa, Satoshi

doi:10.1063/1.4948380

Cited by 21 publications

(15 citation statements)

References 31 publications

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“…One historically prevalent application for ion beam technology is ion implantation for doping and researchers naturally attempted a similar approach for 2D materials by implanting ions of different species in films of graphene to manipulate their electronic properties [20][21][22][23][24]. Other works reported phase changes from semiconducting to quasi-metallic or insulating phases by changing the dose of a focused He + ion beam [25,26]. Researchers have also used ion beams to engineer defects in different TMDs, allowing controlled alteration in electrical, mechanical and optical properties [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Cheng

Abuzaid

et al. 2019

2D Mater.

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Tailoring the properties of two-dimensional (2D) crystals is important for both understanding the material behavior and exploring new functionality. Here we demonstrate the alteration of MoS 2 and metal-MoS 2 interfaces using a convergent ion beam. Different beam energies, from 60 eV to 600 eV, are shown to have distinct effects on the optical and electrical properties of MoS 2. Defects and deformations created across different layers were investigated, revealing an unanticipated improvement in the Raman peak intensity of multilayer MoS 2 when exposed to a 60 eV Ar + ion beam, and attenuation of the MoS 2 Raman peaks with a 200 eV ion beam. Using cross-sectional scanning transmission electron microscopy (STEM), alteration of the crystal structure after a 600 eV ion beam bombardment was observed, including generated defects and voids in the crystal. We show that the 60 eV ion beam yields improvement in the metal-MoS 2 interface by decreasing the contact resistance from 17.5 kΩ • µm to 6 kΩ • µm at a carrier concentration of n 2D = 5.4 × 10 12 cm −2. These results advance the use of low-energy ion beams to modify 2D materials and interfaces for tuning and improving performance in applications of sensors, transistors, optoelectronics, and so forth.

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Section: Introductionmentioning

confidence: 99%

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Cheng

Abuzaid

et al. 2019

2D Mater.

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“…8 Therefore, the three concave ∆C profiles, which correspond to the depression of the topography profile in Fig. 1(c), indicate the metal-Anderson insulator transition.…”

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confidence: 87%

“…7 Moreover, we exhibited the Anderson localization of H + -irradiated single-layer graphene (SLG). 8 In this study, we ascertain the spatial dependence of Anderson localization of SLG.…”

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confidence: 99%

Conductivity change of defective graphene by helium ion beams

Naitou

Ogawa

2017

AIP Advances

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Applying a recently developed helium ion microscope, we demonstrated direct nano-patterning and Anderson localization of single-layer graphene (SLG) on SiO2/Si substrates. In this study, we clarified the spatial-resolution-limitation factor of direct nano-patterning of SLG. Analysis of scanning capacitance microscopy measurements reveals that the conductivity of helium ion (H+)-irradiated SLG nanostructures depends on their geometrical size, i.e., the smaller the H+-irradiated SLG region, the higher its conductivity becomes. This finding can be explained by the hopping carrier transport across strongly localized states of defective SLG.

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“…One of the most useful features of strongly correlated oxides is that the ground state properties can be modified easily by various means, including implantation of or irradiation with light, inert ions like He and Ar. [193][194][195][196][197] A key advantage of this approach is the ability to focus a beam of light ions down to a beam diameter on the order of a few nanometers, localizing the effect the light ions have on the correlated material. 196,197 One application is modifying the oxygen stoichiometry within a narrow region of a few nanometers.…”

Section: B Coupling Magnetic Devicesmentioning

confidence: 99%

Quantum materials for energy-efficient neuromorphic computing

Hoffmann,

Ramanathan,

Grollier

et al. 2022

Preprint

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Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

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Anderson localization of graphene by helium ion irradiation

Cited by 21 publications

References 31 publications

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Conductivity change of defective graphene by helium ion beams

Quantum materials for energy-efficient neuromorphic computing

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