2020
DOI: 10.1016/j.actamat.2020.07.045
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Analyzing thermoelectric transport in n-type Mg2Si0.4Sn0.6 and correlation with microstructural effects: An insight on the role of Mg

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Cited by 23 publications
(13 citation statements)
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“…Nevertheless, a far more important point to ensure long-term TEG performance is the material stability. It has been already shown that the n-type TE properties are very sensitive to Mg evaporation, which greatly alters the carrier concentration [27,30,[55][56][57]. The investigation of suitable coating and annealing conditions should therefore be prioritized for further TEG development, see, e.g., Refs.…”
Section: Discussionmentioning
confidence: 99%
“…Nevertheless, a far more important point to ensure long-term TEG performance is the material stability. It has been already shown that the n-type TE properties are very sensitive to Mg evaporation, which greatly alters the carrier concentration [27,30,[55][56][57]. The investigation of suitable coating and annealing conditions should therefore be prioritized for further TEG development, see, e.g., Refs.…”
Section: Discussionmentioning
confidence: 99%
“…This could be due to grain boundary scattering having an impact at low temperatures. This has been observed for Mg 2 Si [60] and Mg 2 (Si,Sn) [61,62] as well as for other material classes [63,64]. The extent of grain boundary scattering apparently depends sensitively on the synthesis route and the synthesis parameters.…”
Section: Discussionmentioning
confidence: 74%
“…observed for Mg 3 Sb 2 and Mg 2 Si systems, where going from Mg-rich to Mg-poor can change the carrier concentration by $10 20 cm À3 and even switch polarity. 33,35,[51][52][53][54] This indicates that (at least with the employed synthesis approach) the carrier concentration range of single phase MgAg 0.97 Sb 0.995 is relatively narrow and the phase width is hence small or the compensation between different defect types is strong.…”
Section: Synthesis Process Optimization: Reproducible Resultsmentioning
confidence: 99%