Analyzing periodical textured silicon solar cells by the TCAD modeling

Gulomov, Jasurbek; Алиев, Р.

doi:10.17586/2226-1494-2021-21-5-626-632

Cited by 9 publications

(9 citation statements)

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“…Nowadays, Lumerical [ 30 ], Silvaco [ 31 ] and Sentaurus [ 32 ] are widely used as TCAD software. In this paper, Sentaurus TCAD software was used to determine the optical and electrical properties of the MoO 3 /Si heterojunction solar cell.…”

Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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Metal oxides are commonly used in optoelectronic devices due to their transparency and excellent electrical conductivity. Based on its physical properties, each metal oxide serves as the foundation for a unique device. In this study, we opt to determine and assess the physical properties of MoO3 metal oxide. Accordingly, the optical and electronic parameters of MoO3 are evaluated using DFT (Density Functional Theory), and PBE and HSE06 functionals were mainly used in the calculation. It was found that the band structure of MoO3 calculated using PBE and HSE06 exhibited indirect semiconductor properties with the same line quality. Its band gap was 3.027 eV in HSE06 and 2.12 eV in PBE. Electrons and holes had effective masses and mobilities of 0.06673, −0.10084, 3811.11 cm2V−1s−1 and 1630.39 cm2V−1s−1, respectively. In addition, the simulation determined the dependence of the real and imaginary components of the complex refractive index and permittivity of MoO3 on the wavelength of light, and a value of 58 corresponds to the relative permittivity. MoO3 has a refractive index of between 1.5 and 3 in the visible spectrum, which can therefore be used as an anti-reflection layer for solar cells made from silicon. In addition, based on the semiconducting properties of MoO3, it was estimated that it could serve as an emitter layer for a solar cell containing silicon. In this work, we calculated the photoelectric parameters of the MoO3/Si heterojunction solar cell using Sentaurus TCAD (Technology Computing Aided Design). According to the obtained results, the efficiency of the MoO3/Si solar cell with a MoO3 layer thickness of 100 nm and a Si layer thickness of 9 nm is 8.8%, which is 1.24% greater than the efficiency of a homojunction silicon-based solar cell of the same size. The greatest short-circuit current for a MoO3/Si heterojunction solar cell was observed at a MoO3 layer thickness of 60 nm, which was determined by studying the dependency of the heterojunction short-circuit current on the thickness of the MoO3 layer.

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Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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“…p and n carriers concentration in the Poisson equation are calculated using Fermi function given in Eq. (7).…”

Section: Physical Background Of Simulationmentioning

confidence: 99%

“…Gradient refractive index is made from some antireflection coatings to optimize the optical properties of solar cells [6]. Additionally, creating the pyramidal textures with a base angle of 70.4 °on the front surface of silicon solar cell was proposed by [6] to lower the reflection coefficient of solar cells and to improve the absorption coefficient of photons [7]. Since the silicon solar cells absorb light in the visible spectrum range [8], luminescent materials [9] and quantum dots [10] are formed on the surface of the solar cell to extend absorption spectrum.…”

Section: Introductionmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

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“…According to the Shockley–Queisser limit, the maximum efficiency of silicon/perovskite tandem solar cells can reach 45% [ 18 ], whereas the efficiency of a multijunction tandem solar cell can even exceed 50% [ 19 ]. To improve the optical properties of a solar cell, and, hence, increase its efficiency, texturing method [ 20 ] and metal nanoparticles [ 21 ] are employed.…”

Section: Introductionmentioning

confidence: 99%

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

et al. 2022

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Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in the development phase. Hence, optimizing the thickness of each of their layers is a challenging research area. In this paper, we investigate the effect of the thickness of each layer on the photoelectric parameters of n-ZnO/p-CH3NH3PbI3/p-NiOx solar cell through various simulations. Using the Sol–Gel method, PSC structure can be formed in different thicknesses. Our aim is to identify a functional connection between those thicknesses and the optimum open-circuit voltage and short-circuit current. Simulation results show that the maximum efficiency is obtained using a perovskite layer thickness of 200 nm, an electronic transport layer (ETL) thickness of 60 nm, and a hole transport layer (HTL) thickness of 20 nm. Furthermore, the output power, fill factor, open-circuit voltage, and short-circuit current of this structure are 18.9 mW/cm2, 76.94%, 1.188 V, and 20.677 mA/cm2, respectively. The maximum open-circuit voltage achieved by a solar cell with perovskite, ETL and HTL layer thicknesses of (200 nm, 60 nm, and 60 nm) is 1.2 V. On the other hand, solar cells with the following thicknesses, 800 nm, 80 nm, and 40 nm, and 600 nm, 80 nm, and 80 nm, achieved a maximum short-circuit current density of 21.46 mA/cm2 and a fill factor of 83.35%. As a result, the maximum value of each of the photoelectric parameters is found in structures of different thicknesses. These encouraging results are another step further in the design and manufacturing journey of PSCs as a promising alternative to silicon PV.

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Analyzing periodical textured silicon solar cells by the TCAD modeling

Cited by 9 publications

References 0 publications

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

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