2001
DOI: 10.1002/sia.957
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Analytical ultrahigh‐vacuum transmission electron microscopy applied to the study of Pd2Si island formation on Si(111) surfaces

Abstract: Analytical ultrahigh-vacuum transmission electron microscopy was applied to study the formation process of Pd 2 Si islands on Si(111) surfaces. The deposition of Pd onto the Si(111) surfaces at ∼670 K caused the formation of Pd 2 Si islands of size 10-40 nm. High-resolution transmission electron microscopy (HRTEM) revealed an epitaxial interface, surface depression, bulk erosion of the substrate around the islands and a superstructure phase at the (0001) surface of the islands. Energy-dispersive x-ray spectros… Show more

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Cited by 14 publications
(3 citation statements)
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“…The deposits were characterized with a 200 kV ultrahigh vacuum field emission gun transmission electron microscope (UHV-FEG-TEM), equipped with an electron energy loss spectroscopy (EELS) device [18]. A post-deposition heat treatment was carried out in a pre-treatment chamber connected to the specimen chamber of the UHV-FEG-TEM through a gate valve.…”
Section: Methodsmentioning
confidence: 99%
“…The deposits were characterized with a 200 kV ultrahigh vacuum field emission gun transmission electron microscope (UHV-FEG-TEM), equipped with an electron energy loss spectroscopy (EELS) device [18]. A post-deposition heat treatment was carried out in a pre-treatment chamber connected to the specimen chamber of the UHV-FEG-TEM through a gate valve.…”
Section: Methodsmentioning
confidence: 99%
“…They are connected through the UHV transferal system. 35,36) The specimen can remain in the UHV environment during the process of Si substrate treatment and Fe deposition.…”
Section: Methodsmentioning
confidence: 99%
“…The deposits were characterized with a 200 kV ultrahighvacuum field-emission-gun transmission electron microscope (UHV-FEG-TEM) equipped with an EELS device. 18) Postdeposition heat treatment was carried out in a pretreatment chamber connected to the specimen chamber of the UHV-FEG-TEM through a gate valve. The specimens were heated up to 600 C for 1-2 h. The vacuum pressure of the pretreatment chamber was maintained on the order of 10 À7 Pa during the heat treatment.…”
Section: Methodsmentioning
confidence: 99%