Analytical Theory of Graphene Nanoribbon Transistors

Abstract

Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

“…Thus, the method is inaccurate for investigating the role of GNR width as a key attribute in static performance of GNR FETs. In addition, the existence of mismatch between the parabolic band approximation and the exact dispersion relation in analytical models [16], top-of-the-barrier model [26] or semi-analytical model [27] can have an erroneous estimation of actual concentration of carriers in the channel. The accurate results and deeper physical insight can be achieved by atomistic quantum transport models at the expense of long computational times.…”

Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain

“…Furthermore, although there are some analytical models for describing unstrained GNR-FETs [30,31], no analytical model for electronic properties of strained GNR-FET has been reported.…”

Graphene nanoribbon FETs: Technology exploration and CAD

“…Through a re-parameterization of the TB model using additional parameters that describe these effects, it is possible to obtain a band-structure in agreement with the ab initio calculations in the energy range of interest [39]. When integrated with the basic Landauer approach, it is possible to derive an analytical model to describe ballistic GNRFETs that handles these effects [40]. Results based on this simple model indicate the important role of the edge bond relaxation and third nearest neighbor interaction effects on the electrostatics of AGNRs.…”