Analytical Study of Sputter-Grown ZnO-Based p-i-n Homojunction UV Photodetector

Singh, Ruchi; Bhardwaj, Ravindra; Siddharth, Gaurav; Kumar, P.; Mukherjee, Shaibal

doi:10.1109/jsen.2020.3047767

Cited by 12 publications

(5 citation statements)

References 43 publications

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“…Therefore, the device generates a dark current under this condition. 33,34 This working principle explains why the double built-in electric fields in the p-Gr/i-Sm 2 O 3 /n-SiC heterojunction are able to improve the collection efficiency of photogenerated carriers; they are the reason for the highperformance characteristics exhibited by this device and shown in Figure 5b. This principle is also likely to be used in optoelectronic applications of other rare-earth oxide semiconductors in the future, as they may also demonstrate excellent optoelectronic detection performance by constructing heterojunctions with Gr.…”

Section: Resultsmentioning

confidence: 86%

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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Rare-earth oxide Sm 2 O 3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm 2 O 3 /n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 10 11 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm 2 O 3based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.

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Section: Resultsmentioning

confidence: 86%

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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“…Several studies have proved that, because of the poor hole mobility, for a large number of QWs at a given injection current, the QWs farther away from the cap layer are rarely filled by holes and are passive in terms of optical generation. [5,21] Actually, the optimum number of QWs is associated with the capture and escapes rates and also the well width. Holes, with poor mobility, are able to attain the wells nearer to the p-contact, but electrons with much higher mobility than the holes can penetrate to more distant wells.…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, almost all reports on the ZnO-based LEDs consider p-type ZnO layer as one of the constituent components of the modeled device. [1,[3][4][5] This results in favorable outputs in the calculation, but the story is quite different in practice. As a solution, some authors have utilized p-NiO for ZnO-based photodiodes.…”

mentioning

confidence: 99%

Theoretical Study of the Performance and Efficiency Droop of a ZnO‐Based Multiquantum Well Light‐Emitting Diode

Madavani

Jahromi

Ziabari

et al. 2022

Physica Status Solidi (a)

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A zinc oxide‐based multiquantum well light‐emitting diode is proposed in this paper. MgZnO is used as the barrier, and CdZnO compound is used as the quantum well. Due to difficulties toward synthesis of p‐ZnO, a p‐GaN layer is used as the top layer. Also, a p‐MgZnO layer is utilized as electron‐blocking layer. The performance and efficiency droop (ED) of the modeled device then are studied with different Mg and Cd concentration, thickness of quantum barrier, number of quantum well, and carrier concentration of p‐GaN layer. During an optimization operation, the optimized values of these parameters are determined. It is revealed that the carrier concentration of p‐GaN layer is the most influencing parameter on the quantum efficiency and ED of the modeled device.

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“…Accordingly, the effort to explore other direct semiconductor with a wide energy bandgap as a substitute for the GaN-based material using the simple deposition technology is carried out. Zinc oxide (ZnO) material performs quality crystallinity with the direct energy bandgap of about 3.37 eV by using cost-effective deposition technologies, such as hydrothermal method, pulse laser deposition, and sputtering [5][6][7], making it a promising candidate for short-wavelength photonic device application. In addition, ZnO also has the advantages of a large exciton binding energy of 60 meV at room temperature, resistance to radiation damage, and suitability for the wet-etching process over the commercial-used GaN material.…”

Section: Introductionmentioning

confidence: 99%

“…Those excellent physical and chemical properties are expected to be brighter than the current state-of-the-art GaN-based photonic device for the near UV and UV light emitting diode (LED) applications. Currently, ZnO-based homojunction diodes are fabricated for the photodetector (PD) or LED applications [7][8][9][10][11]. Quality and stable n-and p-type ZnO semiconductors as well as engineer their interfacial property are essential to achieve the ZnO-based homojunction diode.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Huang¹,

You²,

Yang³

et al. 2021

Mater. Res. Express

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In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p-type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p-GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n-ZnO/p-GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n-type ZnO film directly deposited onto the p-GaN epilayer. Meanwhile, the native defects in the n-ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n-ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.

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Analytical Study of Sputter-Grown ZnO-Based p-i-n Homojunction UV Photodetector

Cited by 12 publications

References 43 publications

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Theoretical Study of the Performance and Efficiency Droop of a ZnO‐Based Multiquantum Well Light‐Emitting Diode

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

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Analytical Study of Sputter-Grown ZnO-Based p-i-n Homojunction UV Photodetector

Cited by 12 publications

References 43 publications

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection

Theoretical Study of the Performance and Efficiency Droop of a ZnO‐Based Multiquantum Well Light‐Emitting Diode

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Contact Info

Product

Resources

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Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection