Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN

Mazumder, Abdullah Al Mamun; Hasan, Md. Soyaeb; Iskanderani, Ahmed I.; Islam, Md. Rafiqul; Hasan, Md. Tanvir; Mehedi, Ibrahim M.

doi:10.1016/j.rinp.2020.103679

Cited by 6 publications

(3 citation statements)

References 32 publications

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“…The total charge for the device which is fetched to Poisson's solver is given by 𝜌 𝑇𝑜𝑡𝑎𝑙 = 𝜌 𝐹𝑟𝑒𝑒 + 𝜌 𝐹𝑖𝑥𝑒𝑑 (4) Here,𝜌 𝑠 (𝑧) is the fixed charge (𝜌 𝐹𝑖𝑥𝑒𝑑 ) which is accumulated at the interface due to surface states and forms the barrier at the metal-X-ene interface. The 𝜌 𝑠 (𝑧) is given by [25]- [27]…”

Section: Theorymentioning

confidence: 99%

“…The decay of the surface charge states inside the X-enes has been determined by the physical properties of the X-enes. The decay parameter 𝜆is the cumulative effect of the several factors such as electron-electron scattering and the electron-phonon scattering due to the surface states [25]. In order to understand the impact of decay parameter on the transport of the X-ene based devices, the decay parameter 𝜆 is considered to be analogous to the tunneling width of the barrier.…”

Section: Theorymentioning

confidence: 99%

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Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Junghare,

Patil

2024

IEEE Trans. Nanotechnology

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In this work, comprehensive analysis of Schottky barrier (SB) field effect transistors (FETs) having 2D mono-elemental (X-enes) nanoribbon (NR) with width of 10 dimers along the armchair direction as a channel material has been carried out. The multiscale approach used for simulating the hydrogen passivated X-ene NR SBFETs consists of density functional theory (DFT), Wannier function based tight binding and the nonequilibrium Green's Function formalism (NEGF). The derived bandgaps for X-enes such as graphene, germanene, phosphorene and silicene are 1.27, 0.379, 1.036 and 0.431 eV respectively. To incorporate the effect of band-bending at the metal-X-ene interface the modification in the conventional multi-scale approach has also been proposed. To mimic the effect of band bending at metal-X-ene interface the schemes proposed in the model are, addition of equivalent channel potential energy in the Hamiltonian matrix and the addition of fixed charges in initial charge profile. Further, the impact of SB width, Fermi level pinning and the scattering on the device performance has also been explored. The results show that the on-state drive current-to-off-state leakage current ratio in the case of graphene and phosphorene SBFETs is up-to the order ~107 whereas for silicene and germanene SBFETs it is in the order of ~103.

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Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Junghare,

Patil

2024

IEEE Trans. Nanotechnology

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“…Though Si has obtained steeper subthreshold swings [13], [14], it will be more challenging to obtain enough high on currents in Si-based devices due to the indirect and wide bandgap [10], [11], [15]- [17]. To reduce the effective tunneling barrier height and ratify high on-current, III-V (e.g., Ge, SiGe, InAs, InGaAs) material-based heterostructure TFET devices have been established and show excellent performance [18]- [20]. For instance, a high-K dielectric double gate tunnel FET (DGTFET) was proposed by K. Boucart [10], which offers a significant ON current of 0.23 mA at 1.8 V gate voltage with an incredibly low OFF current value of less than 1 f A.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

et al. 2022

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We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the gate stacking, we proposed a tri-layer HfO 2 /TiO 2 /HfO 2 as a high-K dielectric and hafnium zirconium oxide (HZO) as a ferroelectric (FE) layer. The proposed GAA-TFET overcomes the thermionic limitation (60 mV/decade) of conventional MOSFETs' subthreshold swing (SS) thanks to its improved electrostatic control and quantum mechanical tunneling. Simultaneously, the NC state of ferroelectric materials improves TFET performance by exploiting differential amplification of the gate voltage under certain conditions. The most surprising discoveries of this device, which outperforms all previous results, are the very high I ON /I OFF ratio on the order of 10 11 and the enormous on-state current of 135 µA. The incorporation of the NC effect with a 9 nm HZO results in the lowest SS of 20.56 mV/dec (52.38% lower than baseline TFET) and the highest voltage gain of 6.58. Furthermore, the output characteristics revealed a large transconductance (g m ) of 7.87 mS (10 3 order higher than the baseline TFET), drain-induced barrier lowering (DIBL) of 9.7 mV, and a threshold voltage of 0.53 V (37.65% lower than baseline TFET), all of which are significant. Thus, all of the results indicate that the proposed device structure may lead to a new route for electronic devices, creating higher speed and lower power consumption.INDEX TERMS BTBT, gate-all-around structure, heterojunction, nanowire tunnel-FET, negative capacitance.

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Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

Kim

2021

J. Electron. Mater.

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Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN

Cited by 6 publications

References 32 publications

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

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