Analytical study of edge states in a semi-infinite graphene nanoribbon

Jiang, Liwei; Zheng, Yisong; Yi, Cuishan; Li, Haidong; Lü, Tianquan

doi:10.1103/physrevb.80.155454

Cited by 25 publications

(26 citation statements)

References 24 publications

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“…In the past decade, the remarkable conductivity, strength and other exotic electronic properties of graphene have made it a promising candidate for stretchable transparent electrode [1], ballistic transistor [2], proposed nanospaser [3], platform for exploring gas separation properties [4], metamaterials [5] and other interesting physics [6,7]. While graphene is only a single layer with a potential to revolutionize electronics, it still has one critical limitation, i.e., it has no band gap.…”

Section: Introductionmentioning

confidence: 99%

Monolayer II-VI semiconductors: A first-principles prediction

et al. 2015

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A systematic study of thirty-two honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetic stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe BaTe and HgTe honeycomb monolayer have a good dynamic stability, the stability of the five oxides is consistent with the work published in [H. L. Zhuang et al., Appl. Phys. Lett. 103, 212102 (2013)]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P4/nmm (129)] and orthorhombic HgS [P2 1 /m (11)]. The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region.Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin orbital coupling (SOC) [J. Li et al., arXiv:1412.2528v1 (2014]. Some II-VI partners with less than 5% lattice mismatch may be used to 2 design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics and strong correlated electronics.Corresponding

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Section: Introductionmentioning

confidence: 99%

Monolayer II-VI semiconductors: A first-principles prediction

et al. 2015

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“…Here, g s/d are solved by sticking out a semi-infinite one dimensional double-atom chain from semi-infinite AGNR in the Green’s function space [23]. The Green’s function coefficients extracted by derivation, , and , are the on-site energy, the coupling between the two atoms in each primitive cell, and the coupling between the neighboring two primitive cells of the chain, respectively.…”

Section: Modelmentioning

confidence: 99%

HighI_on/I_offcurrent ratio graphene field effect transistor: the role of line defect

Tajarrod

Saghai

2015

Beilstein J. Nanotechnol.

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SummaryThe present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.

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“…In this work, we would like to analytically solve them by projecting the semi-infinite AGNR in the Green function space into a semi-infinite one-dimensional double-atom chain [43]. By derivation, we get the coefficients of the Green function, i.e.,

[W_{o}] = (ω - ε_{c}) I (N) - t_{0}^{2} (ω - ε_{c}) {[{(ω - ε_{c})}^{2} - t_{0}^{2}]}^{- 1} [Ξ]

[W_{i}] = t_{0}^{3} (ω - ε_{c}) {[{(ω - ε_{c})}^{2} - t_{0}^{2}]}^{- 1} [Ξ]

, and [ W e ] = t 0 I ( N ) are the onsite energy, the coupling between the two atoms in each primitive cell, and the coupling between the neighboring two primitive cells of the chain, respectively.…”

Section: Model and Hamiltonianmentioning

confidence: 99%

Fano effect and bound state in continuum in electron transport through an armchair graphene nanoribbon with line defect

et al. 2013

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Electron transport properties in an armchair graphene nanoribbon are theoretically investigated by considering the presence of line defect. It is found that the line defect causes the abundant Fano effects and bound state in continuum (BIC) in the electron transport process, which are tightly dependent on the width of the nanoribbon. By plotting the spectra of the density of electron states of the line defect, we see that the line defect induces some localized quantum states around the Dirac point and that the different localizations of these states lead to these two kinds of transport results. Next, the Fano effect and BIC phenomenon are detailedly described via the analysis about the influence of the structure parameters. According to the numerical results, we propose such a structure to be a promising candidate for graphene nanoswitch.PACS81.05.Uw, 71.55.-i, 73.23.-b, 73.25.+i

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Analytical study of edge states in a semi-infinite graphene nanoribbon

Cited by 25 publications

References 24 publications

Monolayer II-VI semiconductors: A first-principles prediction

Monolayer II-VI semiconductors: A first-principles prediction

HighI_on/I_offcurrent ratio graphene field effect transistor: the role of line defect

Fano effect and bound state in continuum in electron transport through an armchair graphene nanoribbon with line defect

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Analytical study of edge states in a semi-infinite graphene nanoribbon

Cited by 25 publications

References 24 publications

Monolayer II-VI semiconductors: A first-principles prediction

Monolayer II-VI semiconductors: A first-principles prediction

HighIon/Ioffcurrent ratio graphene field effect transistor: the role of line defect

Fano effect and bound state in continuum in electron transport through an armchair graphene nanoribbon with line defect

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Product

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HighI_on/I_offcurrent ratio graphene field effect transistor: the role of line defect