Analytical study of drain current and transconductance for a new cylindrical gate MOSFET structure

Jaafar, Hind; Aouaj, Abdellah; Bouziane, Amal; Iñı́guez, Benjamı́n

doi:10.1109/icoa.2018.8370495

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…Trans conductance is obtained by doing the 1st derivative of Id vs Vgs simulation. The highest value of gm is obtained in inversion region and which can be used for circuit applications [22][23].The trans conductance equation is given below Here 10nm exhibits lower output impedance and 32nm represents higher output impedance. For a circuit to perform better especially for amplifier circuits they should have lower output impedance in order to increase the power.…”

Section: Resultsmentioning

confidence: 99%

Design, Simulation and Analysis of Junction Version Multi-Fin FINFET

Rao

Vandana

2021

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This paper presents a 3-D statistical simulation study of Multi-fin junction FinFET for different technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their corresponding Electrical parameters like on current (Ion), off current (Ioff), threshold voltage (Vth) are reported in the paper and also RF/Analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd) are reported. And also parameters like Electric field (E), Electron density (ne), Electron mobility (µ) which are measured across the device length are simulated. The proposed structure showed performance improvement in all the parameters when the technology node is decreased.

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Section: Resultsmentioning

confidence: 99%

Design, Simulation and Analysis of Junction Version Multi-Fin FINFET

Rao

Vandana

2021

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“…In this work, the analysis of drain current is extended to obtain the expressions for transconductance m g and drain conductance ds g [9]. The effectiveness of DMG-GC-DOTTDCD MOSFET has been compared with the characteristics of DMG-GC-DOT MOSFET.…”

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confidence: 99%

A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET

Jaafar

Aouaj

Iñı́guez

et al. 2020

IJRES

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A compact model for dual-material gate graded-channel and dual-oxide thickness with two dielectric constant different cylindrical gate (DMG-GC- DOTTDCD) MOSFET was investigated in terms of transconductance, drain conductance and capacitance. Short channel effects are modeled with simple expressions, and incorporated into the core of the model (at the drain current). The design effectiveness of DMG-GC-DOTTDCD was monitored in comparing with the DMG-GC-DOT transistor, the effect of variations of technology parameters, was presented in terms of gate polarization and drain polarization. The results indicate that the DMG-GC-DOTTDCD devices have characteristics higher than the DMG-GC-DOT MOSFET. To validate the proposed model, we used the results obtained from the simulation of the device with the SILVACO-ATLAS-TCAD software.

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