Analytical solution of the subbands and absorption coefficients of AlGaAs-GaAs hyperbolic quantum wells

Li, E.H.; Weiss, B.L.

doi:10.1109/3.199284

Cited by 17 publications

(5 citation statements)

References 45 publications

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“…Moreover, the SPV amplitude related to a narrow QW is expected to be higher than that of a thick QW (see Figure 1c and 4a). This is because of the higher joint density of state, which enhances the absorption of photons (

α^{*} \approx 1 / l_{w}

), [ 10,51 ] and the lower barrier height that helps in thermal escape of charges carriers. In addition, Figure 4a shows that the power‐dependent SPV amplitude exhibits distinct variations for different thicknesses of QW, SPV

\propto p_{exc}^{y}

.…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

Haldar

Kumar

Roychowdhury

et al. 2020

Physica Status Solidi (b)

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The impact of radiative and non‐radiative processes on the photovoltaic response of GaAs/AlGaAs multiple‐quantum wells is investigated by temperature, excitation power, and chopping‐frequency‐dependent surface photovoltage (SPV) measurements. It is shown that a systematic study of SPV amplitude along with phase spectra can provide important information on thermal escape, carrier localization, and spatial redistribution of charge carriers. Characteristic features in SPV‐phase spectra related to quantum well (QW) transitions and their variation under an external perturbation are explained by the electron–electron interaction. It is found that a many‐body interaction inside the QW is responsible for the capture of charges at the heterointerfaces, which builds up an interface electric field and hinders the drift/diffusion of charges. Such an effect becomes dominant under higher excitation powers, causing a sub‐linear enhancement of photovoltage amplitude and an increase in phase delay as a function of photon flux. From the chopping‐frequency‐dependent SPV measurements, it is concluded that carriers during the drift in barrier layers are repeatedly captured by point defects and other QWs, which enhances the effective time response of the photovoltage signal. Results obtained in this study are beneficial in the engineering of quantum structures for high‐efficiency photovoltaics and non‐invasive characterization of electro‐optical processes.

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α^{*} \approx 1 / l_{w}

\propto p_{exc}^{y}

.…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

Haldar

Kumar

Roychowdhury

et al. 2020

Physica Status Solidi (b)

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“…To analyze the PL peak energies of the annealed QW profile, we have considered a HQW with a potential profile defined as [26] …”

Section: Theoretical Detailsmentioning

confidence: 99%

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells

Kumar

Sen²,

Das

2016

Optik

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“…Interdiffusion is achieved by implantation of zinc impurities and followed by rapid thermal annealing. The diffusion profile of the aluminum composition across the QW structure can be determined by the Fick's Law of diffusion such that the shape of QW as well as the wavefunctions of electrons and holes can also be calculated [40]. In the model, the effect of interdiffusion is characterized by a diffusion length, , where 0Å represents the as-grown QW.…”

Section: A Optical Properties Of Gaas-al Ga As Diffused Qwmentioning

confidence: 99%

Semiconductor lasers using diffused quantum-well structures

Yu¹,

Li²

1998

IEEE J. Select. Topics Quantum Electron.

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We assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QW's are studied. In addition, novel design of diffused QW's structures to maintain stable singlemode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given.

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Analytical solution of the subbands and absorption coefficients of AlGaAs-GaAs hyperbolic quantum wells

Cited by 17 publications

References 45 publications

Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells

Semiconductor lasers using diffused quantum-well structures

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