Analytical solution of the equations describing interstitial migration of impurity atoms
O. I. Velichko,
N. A. Sobolevskaya
Abstract:An analytical solution of the equations describing impurity diffusion due to the migration of nonequilibrium impurity interstitial atoms was obtained for the case of the Robin boundary condition on the surface of a semiconductor. The solution obtained can be useful for verification of approximate numerical solutions, for simulation of a number of processes of interstitial diffusion, and for modeling impurity diffusion in doped layers with the decananometer thickness because in these layers a disequilibrium bet… Show more
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