2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and 2016
DOI: 10.1109/eurosime.2016.7463305
|View full text |Cite
|
Sign up to set email alerts
|

Analytical, numerical and experimental approach to analysis properties of a silicon membrane pressure sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2017
2017
2017
2017

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…In the proposed construction of the MEMS high-dose radiation sensor, increasing pressure causes deflection of the silicon membrane. Deflections of the 25 mm 2 membrane surface and other thicknesses were calculated (Ansys modelling, figure 5) [13].…”
Section: Mems High-dose Radiation Sensormentioning
confidence: 99%
“…In the proposed construction of the MEMS high-dose radiation sensor, increasing pressure causes deflection of the silicon membrane. Deflections of the 25 mm 2 membrane surface and other thicknesses were calculated (Ansys modelling, figure 5) [13].…”
Section: Mems High-dose Radiation Sensormentioning
confidence: 99%