Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET

Abstract

Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6+m to 2.2+m are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.

Ανάπτυξη μικρομετρικών τρανζίστορ εγκάρσιου πεδίου από καρβίδιο του πυριτίου (SiC)

“…Comparing the set4 with the BHATNAGAR simulation set, one can see that the choice of simulator is important. It is known from the publication [39] that simulator used was the SYNOP-SYS MEDICI simulator. In figure 4.7 and 4.8 the dashed lines represent the simulation results obtained using the BHATNAGAR simulation set and the SILVACO simulator.…”

“…The important channel width values for this category range from 0.44 to 2.2 um. Concretely, the channel length for [39] is 1.6-2.2, for [40] it is 0.77, for [8] it is 1.3-1.9, for the high frequency structure of [41] it is 0.44, for the low frequency of [41]it is 0.55, for [42] it is 0.8-0.9, for [43] it is 0.6 and for [38] it is 1 um. The drift layer length varies according to the desired breakdown value.…”

“…The structure is the one presented in [39]. It is a standard VJFET structure with the particularity that width labelled with W CH indicated in [39] and [161] includes the channel width W CH ' and the length of the two vertical gates W G (vertical). [162].…”