Analytical modelling and electrical characterisation of ZnO based HEMTs

Verma, Yogesh Kumar; Mishra, Varun; Verma, Prateek Kishor; Gupta, Santosh Kumar

doi:10.1080/00207217.2018.1545931

Cited by 17 publications

(2 citation statements)

References 33 publications

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“…In order to reduce the negative impacts on the environment caused by synthetic dyes, natural dyes are developed and applied. Further exploration is conducted to discover the potential of colours and the plants that can be used as sources of natural dyes, thus natural substances will always be available and sustainable [3]. Eco-print is a technique of transferring colours and motifs directly to fabrics through direct contact using natural materials [4].…”

Section: Introductionmentioning

confidence: 99%

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

Musdalifah

Maulina

Nurmasitah

et al. 2022

IOP Conf. Ser.: Earth Environ. Sci.

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To reduce the negative impact caused by synthetic dyes, development and exploration are carried out with the use of Siam weeds (Eupatorium odoratum L) as an alternative. It has main component such as tannin, phenol, flavonoids, saponins and steroid. The method in the study used a quasi – experimental design with a control group research design with descriptive analysis. To make the color solutions by hot extraction, pre-mordant using alum was carried out in 15 times. The post mordanting process used 3 types of mordant; alum, quicklime, and tunjung. Organoleptic test used to test the contrast, the suitability of the dyeing result, and the color of eco-print motif using the pounding technique. The result showed that Siam weed can be used as natural dyes for textile. The color direction of dyeing with mordant alum fixation produced a dawn blue, quicklime produced silver cloud, and tunjung produced dusty olive. While the color result of eco-print on alum fixation was tea color, quicklime was mistletoe and olive branch, and tunjung was deep lichen green. The dark color result on the tunjung fixation and the lightness color on alum fixation.

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Section: Introductionmentioning

confidence: 99%

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

Musdalifah

Maulina

Nurmasitah

et al. 2022

IOP Conf. Ser.: Earth Environ. Sci.

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“…These heterostructure high electron mobility transistor (HEMT) devices exhibits superior performance such as higher transconductance (gm), high current density, low‐power consumption, and higher operating frequency, making it suitable for next generation high‐speed logic applications. Because of these superior characteristics, HEMT is considered to replace the Si MOSFET's in near future . The ultra‐low‐power degradation and exquisite RF performance properties have significantly improved the viability for InAs‐based HEMTs to be used in millimeter wave phased‐array receiver systems …”

Section: Introductionmentioning

confidence: 99%

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

Poornachandran¹,

Mohankumar²,

Kumar

et al. 2019

Int J Numerical Modelling

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This paper gives a comprehensive detail about an emerging InAs high electron mobility transistor (HEMT) technology with proper material combination making it suitable for low-power and high-frequency applications. Over the decade, various material combinations were adopted to improve the sheetcarrier density and frequency performances. In this work, we report the performance and optimization of 30-nm gate length InAs-based dual channel double gate (DCDG) HEMT for terahertz application. The dual channel is formed in the device due to the combination of five layers (In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/ InAs/In 0.7 Ga 0.3 As) and thus provides a significant improvement in drain current and transconductance. Moreover, the gate scaling with optimized gate to drainside recess length of gate (L rd ) leads to reduced parasitic (C gg ) and tremendously increases the RF performance metrics f max and f T . For this device, high drain current of 2.203 mA/μm with peak transconductance of 4.77 mS/μm is observed. Further optimization of L rd results in peak f T of 810 GHz and f max of 900 GHz at a drain source voltage V ds = 0.5 V. These parameters empower a feasibility of the device for submillimeter as well as terahertz applications.

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Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)

Verma¹,

Mishra²,

Gurjar³

et al. 2022

Lecture Notes in Electrical Engineering

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Analytical modelling and electrical characterisation of ZnO based HEMTs

Cited by 17 publications

References 33 publications

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)

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Analytical modelling and electrical characterisation of ZnO based HEMTs

Cited by 17 publications

References 33 publications

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

The use of Siam weed (Eupatorium Odoratum l.) as natural dye in eco-print with pounding technique

Sheet‐carrier density and I‐V analysis of In0.7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications

Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)

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Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications