Analytical modeling of VFET

Chakraborty, Nishith Nirjhar; Razi, Imam Al; Bappy, Mehedy Hasan; Khan, Md. Ziaur Rahman

doi:10.1109/icece.2016.7853928

2016 9th International Conference on Electrical and Computer Engineering (ICECE) 2016

DOI: 10.1109/icece.2016.7853928

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Analytical modeling of VFET

Nishith Nirjhar Chakraborty

Imam Al Razi

Mehedy Hasan Bappy

et al.

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2018

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“…By contrast, Han et al demonstrated successful integration of lateral quasi-vacuum channel field emission transistor (VFET) with MOSFET. Multiple experimental demonstrations − ,,− and simulation − studies are being presented for improved performance and provide design guidelines for lateral field emission air-channel transistors (ACT).…”

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confidence: 99%

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

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Scattering-free transport in vacuum tubes has always been superior to solid-state transistors. It is the advanced fabrication with mass production capability at low cost which drove solid-state nanoelectronics. Here, we combine the best of vacuum tubes with advanced nanofabrication technology. We present nanoscale, metal-based, field emission air channel transistors. Comparative analysis of tungsten-, gold-, and platinum-based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and sharp geometry. Because of this, devices operate in bidirection with voltages <2 V and current values in few tens of nanoamperes range. The experimental data shows that influential operation mechanism is Fowler–Nordheim tunnelling in tungsten and gold devices, while Schottky emission in platinum device. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

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Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

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Analytical modeling of VFET

Cited by 1 publication

References 11 publications

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

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