Abstract:An analytical two-dimensional (2D) model is developed to obtain expressions for various parameters of triple-material trigate junctionless tunnel field-effect transistors (TMTG-JTFETs). The 2D Poisson’s equation uses the superposition approximation method to calculate the sum of potentials arising from different point charges. The electric field distribution in the channel is obtained from the gradient of the electric potential. The drain current of the device is calculated using the Kane’s model in the presen… Show more
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