Analytical modeling of THz wave propagation inside ungated two-Dimensional Electron Gas layers

Khorrami, Mohammad Ali; El-Ghazaly, S.M.; Yu, Shui-Qing; Naseem, H. A.

doi:10.1109/mwsym.2011.5973377

Cited by 4 publications

(9 citation statements)

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“…a/2v 0 . Following, 23 the special frequency f br ¼ a/4pv 0 is named breaking frequency. A SWC mode with a complex propagation constant (nonzero attenuation constant) can represent a growing or an attenuating mode depending on the signs of its propagation and attenuation constants.…”

Section: Analytical Modeling Of the Swcs Propagation In A Biased mentioning

confidence: 99%

Terahertz plasmon amplification using two-dimensional electron-gas layers

Khorrami

El-Ghazaly

et al. 2012

Journal of Applied Physics

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In this study, we present an analytical model to investigate the possibility of guiding and amplifying terahertz (THz) plasmons in a two dimensional electron gas (2DEG) layer of a hetero-structure by applying a bias electric field. This analytical model solves Maxwell equations and semi-classical electronic transport equations inside the biased hetero-structure simultaneously. It is shown that the two dimensional plasmon’s properties alter vastly as the electrons are accelerated by the bias field. Four asymmetric plasmonic modes can propagate inside the un-gated 2DEG layer of the biased hetero-structure. One of these modes in the un-gated 2DEG layer is a growing mode which can be useful in the implementation of THz amplifiers. Since the modes characteristics can be controlled via biasing, design of new plasmonic devices such as modulators and switches is possible by this approach. Similar analysis has been performed in a gated 2DEG layer that shows clear changes in the two dimensional plasmon properties due to the biasing. Unlike the un-gated 2DEG layer, our efforts to find a growing mode in the gated 2DEG layer have failed. These multi-physics models lead to a better understanding of THz plasmonic sources and detectors as well as proposals on new plasmonic devices. Besides, they provide a physical insight into the electron-wave interactions inside the biased hetero-structure.

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Section: Analytical Modeling Of the Swcs Propagation In A Biased mentioning

confidence: 99%

Terahertz plasmon amplification using two-dimensional electron-gas layers

Khorrami

El-Ghazaly

et al. 2012

Journal of Applied Physics

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“…In THz frequencies, application of highly doped semiconductor [4] or noble metals with engineered surfaces [5] are proposed. Propagation of SPs along doped semiconductors suffers from large losses therefore; utilization of Two Dimensional Electron Gas (2DEG) layers of hetero-structures with low SP losses is more popular [6]- [8]. Implementing THz plasmonic sources and detectors, inside 2DEG layers of solid state devices such as High Electron Mobility Transistor (HEMT), is very appealing.…”

Section: Introductionmentioning

confidence: 99%

“…Lately, it has been reported that SPs' wave properties such as propagation constants and phase velocities can be controlled by changing the bias voltage applied at the 2DEG's ends [6]. The electric field induced by the bias voltage accelerates the electrons of the 2DEG.…”

Section: Introductionmentioning

confidence: 99%

“…This motion alters how effectively electrons and wave interact with each other and consequently; SPs' wave properties will change vastly. In particular, two normal SP modes along an unbiased hetero-structure will divide into four new modes as the electrons' drift motion is included [6]. It can be shown that the SP mode that propagates against the electron stream is very lossy.…”

Section: Introductionmentioning

confidence: 99%

“…In the following, a brief overview of the analytic method [6] and global modeling [9] is presented. Also, details of the simulated structure and designed plasmonic switch are reported.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Compact terahertz Surface Plasmon switch inside a Two Dimensional Electron Gas layer

Khorrami

El-Ghazaly

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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The possibility of realizing a terahertz (THz) switch by employing Surface Plasmons (SPs) along a Two Dimensional Electron Gas (2DEG) layer of a hetero-structure is presented. It is shown that SP's properties may be easily controlled by changing the motion of the electrons inside the 2DEG. The electron drift velocity is controlled by applying an external bias voltage at the 2DEG's ends. A compact and efficient THz switch with high OnlOFF signal ratio is reported using this concept. The control voltage of the switch is considerably low. A multi-physic simulator, based on numerical solution of Maxwell's and Boltzmann's equations, is developed to analyze the switch appropriately.This micro-meter size plasmonic switch demonstrates a very promising method for navigating the sub wavelength THz signals inside future plasmonic circuits.

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Full-wave modeling of THz RTD-gated GaN HEMTs

Tenneti

Nahar

Volakis

2015

Infrared Physics & Technology

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Modeling transistors at terahertz frequencies is challenging, because electromagnetic and quantum effects that are negligible in lower frequencies become limiting factors in device performance. Though previous work has focused on modeling the channel of a high-electron mobility transistor (HEMT) using hydrodynamic equations, a more complete toolset is needed to describe submillimeter-wave device gain performance. This paper introduces a simulator that couples fullwave Maxwell's equations with Schrodinger-based charge transport equations, and is used to evaluate the gain performance of a GaN HEMT at THz. This novel simulator is also used to evaluate the effect on gain when a resonant tunneling diode (RTD) is integrated with a HEMT. Upon validation with published work, we state the feasibility of RTD-gated GaN HEMT structures that have resonances up to 2.3 THz and gain up to 6 dB.

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Analytical modeling of THz wave propagation inside ungated two-Dimensional Electron Gas layers

Cited by 4 publications

References 0 publications

Terahertz plasmon amplification using two-dimensional electron-gas layers

Terahertz plasmon amplification using two-dimensional electron-gas layers

Compact terahertz Surface Plasmon switch inside a Two Dimensional Electron Gas layer

Full-wave modeling of THz RTD-gated GaN HEMTs

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