Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

“…The current I D is provided by a physical-based compact model approach, which considers the surface-potential and therefore the intrinsic charges in the AlGaN/GaN HEMT structure [10]. In the p-gate structured HEMT the effect of hole injection occurs according to [11].…”

Modeling of Induced Gate Thermal Noise in HEMTs

“…Velocity saturation effect and vertical field induced mobility degradation have been taken into account as given in [14]. Using P i g = N i g (16π 2 kT f 2 W 2 /I 5 DS L 2 ef f ), A g = μW C g and denoting the surface potentials at the source and the drain ends as ψ s and ψ d respectively, we can write the final expression for S i 2 g as (4), shown at the bottom of the page, where A I and B I are given as (5), shown at the bottom of the page. Since we do not have enough data to perform a complete parameter extraction, we have had to resort to educated guesses wherever necessary.…”

“…The analytical model proposed by Ziel et al is based on a simplistic channel potential dependence and uses a simple long channel drain current equation for MOSFETs, which is not adequate enough to capture all the nuances of HEMTs. Our model is based on the surface potential model proposed by Khandelwal et al [5], which takes FermiDirac statistics and the occupation of the first two energy subbands into account. Also, by virtue of being surface potential based, our model is valid for all biases throughout the operable range, unlike the analytical thermal noise model proposed by Brookes [6], which uses separate model cores for the linear and the saturation regions.…”

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

“…Various models are available for AlGaN/GaN HEMT devices based on numerical calculations, semiempirical model, simplifying approximations [9][10][11] and device physics [12][13][14][15][16][17][18], but mathematical model for AlGaN/GaN HEMTs with gate dielectric has not yet been developed. However, Shenghui et al [19] proposed an analytical charge control model for AlGaN/GaN MIS-HEMTs including undepleted barrier layer, which successfully modelled transfer characteristics.…”