Analytical Modeling of Short-Channel Fully-Depleted Triple Work Function Metal Gate (TWFMG) SOI MESFET

Mohammadi, Hossein; Mohammadi, Mohammad; Amiri, Iraj Sadegh; Hosseinghadiry, Mahdiar

doi:10.1007/s12633-020-00446-w

Cited by 2 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reported SS=78 mV/V, Id(max)=0.1 mA/µm, and DIBL=142 mV/V. Mohammadi et al [14] designed an SOI-MESFET having a gate length above 50 nm. Analytical modeling of the designed FET is carried out.…”

Section: Literature Reviewmentioning

confidence: 99%

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

2023

IJATEE

View full text Add to dashboard Cite

The conventional silicon channel metal oxide semiconductor field effect transistor (MOSFET) has fundamental limits that are reached due to scalability, resulting in short-channel effects (SCE) and other issues in small-channel devices. To overcome these challenges and design a nanoscale device, an alternate material was needed. Graphene, a novel material with exceptional properties, has been utilized to create a graphene field-effect transistor (GFET) optimized using siliconon-insulator (SOI) technology. The SOI structure uses graphene as a channel, resulting in the development of a new silicon-on-insulator graphene field effect transistor (SIGFET) with an 18 nm channel length. The designed SIGFET exhibits significant improvements compared to traditional GFET and MOSFET. Specifically, the subthreshold slope (SS) of the SIGFET is 60.93 mV/decade, the drain-induced barrier lowering (DIBL) is 42.89 mV/V, and the ION/IOFF ratio is 6.55×108, which surpasses previous GFET-based contributions and SOI-MOSFET. Moreover, the effect of temperature change on SIGFET performance has been investigated, revealing that temperature variation only affects the drain current and has no impact on short channel characteristics. Therefore, the SIGFET can be an ideal substitute for traditional silicon channel devices.

show abstract

Section: Literature Reviewmentioning

confidence: 99%

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

2023

IJATEE

View full text Add to dashboard Cite

show abstract

“…However, Green's function involves a large amount of mathematical complexity when we use it to solve Poisson's equation, which results in its solution and application being difficult. 31) The evanescent mode analysis has been adopted to calculate the potential of the proposed device and provides better-scaling predictions than the analyses according to the parabolic approximation. 32) Therefore, the evanescent mode analysis is used in this paper.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Xu,

Cui,

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson’s equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.

show abstract

Analytical Modeling of Short-Channel Fully-Depleted Triple Work Function Metal Gate (TWFMG) SOI MESFET

Cited by 2 publications

References 37 publications

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Contact Info

Product

Resources

About