Analytical Modeling of Organic–Inorganic CH₃NH₃PbI₃ Perovskite Resistive Switching and its Application for Neuromorphic Recognition

Abstract

This paper presents an analytical model of resistive switching in organic-inorganic CH 3 NH 3 PbI 3 perovskite. It is interpreted that the resistive switching phenomenon is due to the formation/rupture of iodine vacancy-based conductive filament (CF) propagating in both vertical and lateral directions. Set and reset processes are explained in the model by the evolution of the CF length and radius driven by electrical and thermal forces. The model-based simulation results can describe the experimental results, providing an estimate of several switching parameters such as the activation energy of iodine vacancy migration and the CF diameter. Learning in a two-transistor/one-resistor synapse structure is demonstrated by simulations. Finally, the neuromorphic recognition of multiple patterns is demonstrated through a two-layer neural network consisting of 5625 presynaptic neurons and four postsynaptic neurons.

Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory

“…The RRAM device used in current work is based on a traditional metal–insulator–metal configuration where a CH 3 NH 3 PbI 3 switching layer was sandwiched between an SnO 2 :F (FTO) bottom electrode (BE) and Al top electrode (TE), as illustrated in Figure a. Figure b shows the X‐ray diffraction (XRD) pattern of the CH 3 NH 3 PbI 3 thin film and confirmed its typical tetragonal perovskite structure . Figure c presents cross‐sectional scanning electron microscope (SEM) and atomic force microscope (AFM) images, which show that the thickness and surface roughness of the CH 3 NH 3 PbI 3 film were approximately 500 and 40 nm, respectively.…”

Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors

“…The low V SET was found preferable for improving the RS variability in the above studies. Moreover, the LEF enhancement effect has been demonstrated as a feasible method to improve RS performance in some previous publications …”

Memristors with organic‐inorganic halide perovskites

“…Analytical models of the OHP‐based memristors are essential tools to predict their memristive performance and optimize the memristive characteristics. Based on the V I migration mechanism, an analytical model for MAPbI 3 ‐based memristor was proposed . In correspondence of RESET process, V I migration can be activated by two processes: the Fick diffusion process and V I drift process.…”

“…B, The experimental/calculated I ‐ V curves of the memistor. C, The calculated evolution of applied voltage, local temperature, and CF parameters with time during RESET/SET process…”

“…Based on the V I migration mechanism, an analytical model for MAPbI 3 -based memristor was proposed. 104 In correspondence of RESET process, V I migration can be activated by two processes: the Fick diffusion process and V I drift process. The driving force of Fick diffusion is the V I concentration gradient.…”