Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT

Rahman, I. K. M. Reaz; Khan, Md. Irfan; Mahdia, Marjana; Khosru, Quazi D. M.

doi:10.1109/nmdc.2018.8605851

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…In order to fully comprehend the experimental characteristics of these devices and to harness their full potential in power-electronic circuit design, thorough understanding of their operation along with a guiding principle for optimal device design is of paramount importance, which necessitates the need to have a fully physics-based analytical compact model for DC-GaN-HEMTs. While several models have been reported for single-channel GaN-HEMTs which includes the state-of-the-art industry standard ASM-GaN-HEMT [12][13][14][15][16][17] and MVSG-GaN [18][19][20] models, only a handful of attempts have been made to model DC-GaN-HEMTs [21][22][23]. Wei et al proposed an analytical model for DC-GaN-HEMTs that only takes care of the electrostatics and as such is only validated against charge densities for both channels at multiple bias conditions [21].…”

Section: Introductionmentioning

confidence: 99%

“…Wei et al proposed an analytical model for DC-GaN-HEMTs that only takes care of the electrostatics and as such is only validated against charge densities for both channels at multiple bias conditions [21]. Rahman et al [22], [23], presented a rigorous investigation using the self-consistent Schrödinger-Poisson equations that also considers transport and therefore models current for multiple device dimensions. Nevertheless, the model is based on a polynomial approximation between the quasi-Fermi level (E f ) and the electron sheet charge density (n s ) and therefore is full of quadratic equations and a long list of fitting parameters which makes the parameter extraction relatively tedious and often ambiguous due to the non-physical nature of the parameters.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Malik¹,

Mir

Bhat

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consistent calculation of the charge densities, for both upper and lower channels, obtained from a solution of the Schrödinger and Poisson equations. Fermi-Dirac (FD) distribution together with 2D density of states is used for mobile carrier statistics in both the channels. Furthermore, drift-diffusion transport is used to compute the channel current using charge densities at channel extremities. Finally, the model is validated against TCAD simulation and experimental data for a DC-GaN-HEMT. The model, by virtue of its fully physics-based nature, precisely captures the charge screening effect in the lower channel without invoking any empirical clamping functions, unlike prior models, and also possesses the feature of being geometrically scalable.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Malik¹,

Mir

Bhat

et al. 2021

IEEE J. Electron Devices Soc.

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Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

Islam

Hasan²,

Islam

et al. 2021

IEEE Access

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In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for highperformance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for sp3d5s * tight-binding modeling. The channel thickness, t ch is varied from 1.7 to 4.7 nm to evaluate the device figure of merits (FOMs). The thinner channel's device shows a lower OFF-state current, while the ticker channel device allows a higher ON-state current. The threshold voltage is approximately 0.4 V for GaAs DG-JLMOSFETs with t ch = 1.7 nm, whereas it reduces to ∼0.05 V for that of t ch = 4.7 nm. Similar characteristics have been shown in GaSb devices. Besides, a significant impact of t ch on the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) is found in GaSb DG-JLMOSFETs compared with those of GaAs devices. The devices show a higher leakage-power dissipation in both channel materials and low-intrinsic delay for thicker t ch due to a substantial amount of energy drop. The above results indicate that III-V-based DG-JLMOSFETs are very promising for next-generation high-performance switching technology.INDEX TERMS GaAs, GaSb, double gate, junctionless MOSFETs, nano-scaled device, short-channel effects (SCEs), high-performance switching.

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Modelling of multiple-channel influence on GaN based HEMTs

Chen

Zhang

et al. 2021

2021 5th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM)

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Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT

Cited by 9 publications

References 6 publications

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

Modelling of multiple-channel influence on GaN based HEMTs

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