Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs

Dey, Aritra; Chakravorty, Anjan; DasGupta, Nandita; DasGupta, Amitava

doi:10.1109/ted.2008.2006109

Cited by 78 publications

(65 citation statements)

References 15 publications

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“…2.1 Subthreshold current model For this, we follow the procedure proposed for 4-T and 3-T doublegate MOSFETs [13]. In the weak inversion domain, the subthreshold current is principally diffusion dominated and proportional to the electron concentration at the virtual cathode [1,2,13,14].…”

Section: Theory Derivation and Model Developmentmentioning

confidence: 99%

A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

et al. 2010

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The Gate All Around (GAA) MOSFET is considered as one of the most promising devices for downscaling below 50 nm. By surrounding the channel completely, the gate gains increased electrostatic control of the channel and short-channel-effects (SCEs) can be drastically suppressed. However, challenges still remain to resolve the important issues particularly concerning hot-carrier reliability and accurate device models for nanoscale circuit designs. Hot-carrier effects have been the major issues in the longterm stability of subthreshold performances in a nanoscale MOS transistor. In this paper we present a two-dimensional analytical analysis of the subthreshold behavior, subthreshold current and subthreshold swing, including the interfacial hot-carrier effects. The calculated results of the proposed approach match well with those of the 2-D numerical device simulator. The present work provides valuable design insights in the performance of nanoscale CMOS-based devices including hot-carrier degradation effects.

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Section: Theory Derivation and Model Developmentmentioning

confidence: 99%

A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

et al. 2010

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“…Since scalability and on-off characteristics of DG-MOSFETs are defined by the subthreshold slope of the device, accurate modeling of DG MOSFETs are of great importance for the designing of switching circuits for VLSI and ULSI applications. A number of theoretical models for the subthreshold swing for DG MOSFETs have been proposed for the undoped [4][5][6] and uniformly doped [7][8][9][10][11] channels. Liang et al [4] proposed a subthreshold swing model for undoped DG MOSFETs where the effect of doping on the subthreshold characteristics was ignored.…”

Section: Introductionmentioning

confidence: 99%

“…Further, they had also emphasized that doped channels could provide better control of the threshold voltage (than the undoped devices) without changing the gate material leading to the multi-threshold processes which are of great interests for analog applications [12,15]. Based on the above assumptions, a number of subthreshold swing models [7][8][9][10][11] were also reported for DG MOSFETs with doped channels. Bhattacherjee et al [7] presented an analytical model to consider only the effect of channel length on the subthreshold swing parameter of DG-MOSFETs with a doped channel.…”

Section: Introductionmentioning

confidence: 99%

“…In this process, Chen et al [10] evaluated the effective conduction path effect parameter ( eff d ) but failed to provide a closed form expression for eff d due to the complexity involved in the evanescent mode analysis to obtain the channel potential in their model. Dey et al [11] proposed an analytical model for the subthreshold swing of uniformly doped DG-MOSFETs in terms of the charge centroid parameter eff d . The model was used to study the subthreshold characteristics with asymmetry in gate-oxide thickness, gate-material work function and gate voltages.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, an attempt has been made to explore the effective conduction path effect concept to model the doping dependent subthreshold swing of symmetric DGMOSFETs with a Gaussian profile in the vertical direction of the channel as was considered by Zhang et al [21] for SOI MOSFETs. The effective conduction path parameter ( eff d ) has been obtained by following the method suggested by Dey et al [11] for uniformly doped channel. The model results have been compared with simulation results obtained by using the ATLAS TM [22] device simulation software to show the validity of our proposed model.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

Tiwari¹,

Jit²

2010

JSTS:Journal of Semiconductor Technology and Science

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Tunable Linearity of High‐Performance Vertical Dual‐Gate vdW Phototransistors

Luo

et al. 2021

Advanced Materials

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Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p–n junction. Here, dual‐channel conduction with ambipolar multilayer WSe2 is presented by employing the device concept of dual‐gate phototransistor, where p‐type and n‐type channels are produced in the same semiconductor using opposite dual‐gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity—a linear photoresponse, with a high responsivity of ≈2.5 × 104 A W−1. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual‐gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ≈2 × 1013 Jones in the linear photoresponse regime. The linear photoresponse and high performance of the dual‐gate WSe2 phototransistor offer the possibility of achieving high‐resolution and quantitative light detection with layered 2D semiconductors.

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Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs

Cited by 78 publications

References 15 publications

A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

Tunable Linearity of High‐Performance Vertical Dual‐Gate vdW Phototransistors

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