Analytical model of high-frequency resonant tunneling: The first-order ac current response

Hc, Liu

doi:10.1103/physrevb.43.12538

Cited by 56 publications

(27 citation statements)

References 35 publications

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“…At first sight, the claims of different authors seem contradictory. [27][28][29][30] Much closer to the present work are the results of Villavicencio, Romo, and García-Calderón. 19 This estimate was used subsequently to justify the observed frequency limits of resonant tunneling diodes, 20,21 but the details of the wave function time dependence were not calculated.…”

Section: Introductionsupporting

confidence: 85%

Resonant tunneling transients and decay for a one-dimensional double barrier potential

Delgado

Muga

Austing

et al. 2004

Journal of Applied Physics

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Erratum: "Resonant tunneling transients and decay for a one-dimensional double barrier structure" [J. Appl. Phys.97, 013705 (2005)] J. Appl. Phys. 99, 089901 (2006); 10.1063/1.2175355 Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Appl.Motivated by recent experimental work on quantum dots subjected to voltage pulses we consider a simple model to study the transition between off-resonance and on-resonance scattering states with the same incident energy in response to a sudden change in the well depth of a double barrier potential structure. The change displaces the real part of the resonance energy to coincide with the incident energy. The resonance buildup is not given by a pure exponential growth due to the interference between incident and resonance components represented by nearby poles, but the resonance lifetime is a relevant time scale. The reverse process (resonance depletion) that follows the opposite change in the well depth detunes the resonance level and the incident energy but, except for short and long time deviations, the decay is exponential with the lifetime of the displaced resonance. For a larger change in the well depth beyond a critical depth, trapping dominates rather than decay since the resonance becomes a bound state.

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Section: Introductionsupporting

confidence: 85%

Resonant tunneling transients and decay for a one-dimensional double barrier potential

Delgado

Muga

Austing

et al. 2004

Journal of Applied Physics

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“…Here we briefly review the transfer matrix approach proposed by Coon and Liu [34,35,36] to solve a general potential profile in the presence of both dc and ac signals. The approach is based on the following asumption: given an arbitrary potential profile, one can always approximate to an arbitrary accuracy the actual profile by a series of steps, namely by dividing the space into regions of constant potentials.…”

Section: Transfer Matrix Approachmentioning

confidence: 99%

Photon-assisted transport in semiconductor nanostructures

2004

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In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of different aspects like nonequilibrium, nonlinearity, quantum confinement or electron-electron interactions gives rise to many intriguing new phenomena. Along the review we give many examples which demonstrate the possibility of using appropriate ac fields to control/manipulate coherent quantum states in semiconductor nanostructures.

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“…Tien and Gordon [4], studied the effect that microwave radiation has on superconducting tunneling devices. Several authors [5][6][7][8][9][10] have investigated the effect that external AC potentials have in different problems. Jonson [11], Apell et al [12] and Johansson et al [13] have studied the sequential contribution to the tunneling through a DBS under an electromagnetic field applied, using models based in the Transfer Hamiltonian formalism [14].…”

Section: Introductionmentioning

confidence: 99%

Coherent and sequential photoassisted tunneling through a semiconductor double-barrier structure

1994

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We have studied the problem of coherent and sequential tunneling through a double barrier structure, assisted by light considered to be present All over the structure, i,e emitter, well and collector as in the experimental evidence.By means of a canonical transformation and in the framework of the time dependent perturbation theory, we have calculated the transmission coefficient and the electronic resonant current. Our calculations have been compared with experimental results turning out to be in good agreement. Also the effect on the coherent tunneling of a magnetic field parallel to the current in the presence of light, has been considered. 73.40.G

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Analytical model of high-frequency resonant tunneling: The first-order ac current response

Cited by 56 publications

References 35 publications

Resonant tunneling transients and decay for a one-dimensional double barrier potential

Resonant tunneling transients and decay for a one-dimensional double barrier potential

Photon-assisted transport in semiconductor nanostructures

Coherent and sequential photoassisted tunneling through a semiconductor double-barrier structure

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