Analytical model of Heterojunction Tunnel Field Effect Transistor incorporating the negative capacitance phenomenon

Singh, Amandeep; Sinha, Sanjeet Kumar; Chander, Sweta

doi:10.1109/icears53579.2022.9751842

Cited by 3 publications

(1 citation statement)

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“…5G base stations require power amplifiers with higher power density. Gallium nitride (GaN) is a wide bandgap semiconductor material that possesses high cut-off frequencies and high saturated electron velocity [1]. Silicon carbide and gallium arsenide-based device are being replaced by high electron mobility transistors (HEMTs) that utilizes GaN.…”

Section: Introductionmentioning

confidence: 99%

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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Section: Introductionmentioning

confidence: 99%